Datasheet > AT29BV040A

AT29BV040A

更新时间： 2024-11-30 22:39:15

品牌	Logo	应用领域
爱特美尔 - ATMEL		闪存电池
页数	文件大小	规格书
10页	435K
描述
4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory

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AT29BV040A 数据手册

AT29BV040A

Features

Single Supply Voltage, Range 2.7V to 3.6V

Single Supply for Read and Write

Software Protected Programming

Fast Read Access Time - 250 ns

•

Low Power Dissipation

•

15 mA Active Current

20 µA CMOS Standby Current

Sector Program Operation

•

Single Cycle Reprogram (Erase and Program)

2048 Sectors (256 bytes/sector)

4 Megabit

(512K x 8)

Internal Address and Data Latches for 256-Bytes

Two 16 KB Boot Blocks with Lockout

Fast Sector Program Cycle Time - 20 ms Max.

•

Single 2.7-volt

Battery-Voltage

CMOS Flash

Memory

Internal Program Control and Timer

DATA Polling for End of Program Detection

Typical Endurance > 10,000 Cycles

CMOS and TTL Compatible Inputs and Outputs

•

Commercial and Industrial Temperature Ranges

•

Description

The AT29BV040A is a 3-volt-only in-system Flash Programmable and Erasable Read

Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by

8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,

the device offers access times up to 250 ns, and a low 54 mW power dissipation.

When the device is deselected, the CMOS standby current is less than 20 µA. The

device endurance is such that any sector can typically be written to in excess of

10,000 times. The programming algorithm is compatible with other devices in Atmel’s

2.7-volt-only Flash memories.

Preliminary

To allow for simple in-system reprogrammability, the AT29BV040A does not require

high input voltages for programming. The device can be operated with a single 2.7V

to 3.6V supply. Reading data out of the device is similar to reading from an EPROM.

Reprogramming the AT29BV040A is performed on a sector basis; 256-bytes of data

are loaded into the device and then simultaneously programmed.

AT29BV040A

During a reprogram cycle, the address locations and 256-bytes of data are captured

at microprocessor speed and internally latched, freeing the address and data bus for

other operations. Following the initiation of a program cycle, the device will automat-

ically erase the sector and then program the latched data using an internal control

timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the

end of a program cycle has been detected, a new access for a read or program can

begin.

TSOP Top View

Type 1

Pin Configurations

Pin Name Function

A0 - A18

Addresses

Chip Enable

Output Enable

Write Enable

I/O0 - I/O7 Data Inputs/Outputs

NC No Connect

0383B

4-23

12 3 4 5 6 7...10

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与AT29BV040A相关器件

型号	品牌	获取价格	描述	数据表
AT29BV040A_08	ATMEL	获取价格	4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT29BV040A-20CC	ETC	获取价格	EEPROM\|FLASH\|512KX8\|CMOS\|BGA\|32PIN\|PLASTIC
AT29BV040A-20CI	ETC	获取价格	EEPROM\|FLASH\|512KX8\|CMOS\|BGA\|32PIN\|PLASTIC
AT29BV040A-20JU	ATMEL	获取价格	4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT29BV040A-20TC	ATMEL	获取价格	4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory
AT29BV040A-20TI	ATMEL	获取价格	4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory
AT29BV040A-20TU	ATMEL	获取价格	4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT29BV040A-25	ATMEL	获取价格	4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory
AT29BV040A-25CC	ETC	获取价格	EEPROM\|FLASH\|512KX8\|CMOS\|BGA\|32PIN\|PLASTIC
AT29BV040A-25CI	ETC	获取价格	EEPROM\|FLASH\|512KX8\|CMOS\|BGA\|32PIN\|PLASTIC

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