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AT29BV040A-25TC PDF预览

AT29BV040A-25TC

更新时间: 2024-11-30 22:39:15
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存电池
页数 文件大小 规格书
10页 435K
描述
4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory

AT29BV040A-25TC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:TSSOP, TSSOP32,.8,20
针数:32Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.84最长访问时间:250 ns
启动块:BOTTOM/TOP命令用户界面:NO
数据轮询:YES耐久性:10000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G32JESD-609代码:e0
长度:18.4 mm内存密度:4194304 bit
内存集成电路类型:FLASH内存宽度:8
湿度敏感等级:3功能数量:1
部门数/规模:2K端子数量:32
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP32,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH页面大小:256 words
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:3/3.3 V编程电压:2.7 V
认证状态:Not Qualified座面最大高度:1.2 mm
部门规模:256最大待机电流:0.00004 A
子类别:Flash Memories最大压摆率:0.015 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30切换位:YES
类型:NOR TYPE宽度:8 mm
最长写入周期时间 (tWC):20 ms

AT29BV040A-25TC 数据手册

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AT29BV040A  
Features  
Single Supply Voltage, Range 2.7V to 3.6V  
Single Supply for Read and Write  
Software Protected Programming  
Fast Read Access Time - 250 ns  
Low Power Dissipation  
15 mA Active Current  
20 µA CMOS Standby Current  
Sector Program Operation  
Single Cycle Reprogram (Erase and Program)  
2048 Sectors (256 bytes/sector)  
4 Megabit  
(512K x 8)  
Internal Address and Data Latches for 256-Bytes  
Two 16 KB Boot Blocks with Lockout  
Fast Sector Program Cycle Time - 20 ms Max.  
Single 2.7-volt  
Battery-Voltage  
CMOS Flash  
Memory  
Internal Program Control and Timer  
DATA Polling for End of Program Detection  
Typical Endurance > 10,000 Cycles  
CMOS and TTL Compatible Inputs and Outputs  
Commercial and Industrial Temperature Ranges  
Description  
The AT29BV040A is a 3-volt-only in-system Flash Programmable and Erasable Read  
Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by  
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,  
the device offers access times up to 250 ns, and a low 54 mW power dissipation.  
When the device is deselected, the CMOS standby current is less than 20 µA. The  
device endurance is such that any sector can typically be written to in excess of  
10,000 times. The programming algorithm is compatible with other devices in Atmel’s  
2.7-volt-only Flash memories.  
Preliminary  
To allow for simple in-system reprogrammability, the AT29BV040A does not require  
high input voltages for programming. The device can be operated with a single 2.7V  
to 3.6V supply. Reading data out of the device is similar to reading from an EPROM.  
Reprogramming the AT29BV040A is performed on a sector basis; 256-bytes of data  
are loaded into the device and then simultaneously programmed.  
AT29BV040A  
During a reprogram cycle, the address locations and 256-bytes of data are captured  
at microprocessor speed and internally latched, freeing the address and data bus for  
other operations. Following the initiation of a program cycle, the device will automat-  
ically erase the sector and then program the latched data using an internal control  
timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the  
end of a program cycle has been detected, a new access for a read or program can  
begin.  
TSOP Top View  
Type 1  
Pin Configurations  
Pin Name Function  
A0 - A18  
CE  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
OE  
WE  
I/O0 - I/O7 Data Inputs/Outputs  
NC No Connect  
0383B  
4-23  

AT29BV040A-25TC 替代型号

型号 品牌 替代类型 描述 数据表
AT29BV040A-25TI ATMEL

完全替代

4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory

与AT29BV040A-25TC相关器件

型号 品牌 获取价格 描述 数据表
AT29BV040A-25TCT/R ATMEL

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Flash, 512KX8, 250ns, PDSO32, PLASTIC, TSOP-32
AT29BV040A-25TI ATMEL

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4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory
AT29BV040A-25TIT/R ATMEL

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Flash, 512KX8, 250ns, PDSO32, PLASTIC, TSOP-32
AT29BV040A-25TU ATMEL

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Flash, 512KX8, 250ns, PDSO32, 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32
AT29BV040A-25TUT/R ATMEL

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Flash, 512KX8, 250ns, PDSO32, PLASTIC, TSOP-32
AT29BV040A-35 ATMEL

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4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory
AT29BV040A-35CC ATMEL

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Flash, 512KX8, 350ns, PBGA32, 5 X 10 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, PLASTIC, CSBGA-32
AT29BV040A-35CI ATMEL

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Flash, 512KX8, 350ns, PBGA32, 5 X 10 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, PLASTIC, CSBGA-32
AT29BV040A-35TC ATMEL

获取价格

4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory
AT29BV040A-35TCT/R ATMEL

获取价格

Flash, 512KX8, 350ns, PDSO32, PLASTIC, TSOP-32