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AT29BV040A-35TU PDF预览

AT29BV040A-35TU

更新时间: 2024-12-01 21:10:03
品牌 Logo 应用领域
爱特美尔 - ATMEL 光电二极管内存集成电路
页数 文件大小 规格书
14页 277K
描述
Flash, 512KX8, 350ns, PDSO32, 8 X 20 MM, PLASTIC, TSOP1-32

AT29BV040A-35TU 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:8 X 20 MM, PLASTIC, TSOP1-32
针数:32Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.82最长访问时间:350 ns
启动块:BOTTOM/TOPJESD-30 代码:R-PDSO-G32
JESD-609代码:e3长度:18.4 mm
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:32
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
类型:NOR TYPE宽度:8 mm
最长写入周期时间 (tWC):20 msBase Number Matches:1

AT29BV040A-35TU 数据手册

 浏览型号AT29BV040A-35TU的Datasheet PDF文件第2页浏览型号AT29BV040A-35TU的Datasheet PDF文件第3页浏览型号AT29BV040A-35TU的Datasheet PDF文件第4页浏览型号AT29BV040A-35TU的Datasheet PDF文件第5页浏览型号AT29BV040A-35TU的Datasheet PDF文件第6页浏览型号AT29BV040A-35TU的Datasheet PDF文件第7页 
Features  
Single Supply Voltage, Range 2.7V to 3.6V  
Single Supply for Read and Write  
Software Protected Programming  
Fast Read Access Time – 250 ns  
Low Power Dissipation  
– 15 mA Active Current  
– 40 µA CMOS Standby Current  
Sector Program Operation  
– Single Cycle Reprogram (Erase and Program)  
– 2048 Sectors (256 Bytes/Sector)  
4-Megabit  
– Internal Address and Data Latches for 256 Bytes  
Two 16K Bytes Boot Blocks with Lockout  
Fast Sector Program Cycle Time – 20 ms Max.  
Internal Program Control and Timer  
DATA Polling for End of Program Detection  
Typical Endurance > 10,000 Cycles  
CMOS and TTL Compatible Inputs and Outputs  
Commercial and Industrial Temperature Ranges  
(512K x 8)  
Single 2.7-volt  
Battery-  
VoltageFlash  
Memory  
Description  
The AT29BV040A is a 3-volt-only in-system Flash Programmable and Erasable Read  
Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by  
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,  
the device offers access times to 250 ns, and a low 54 mW power dissipation. When  
the device is deselected, the CMOS standby current is less than 40 µA. The device  
AT29BV040A  
Pin Configurations  
Pin Name  
A0 - A18  
CE  
Function  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
Data Inputs/Outputs  
No Connect  
CBGA  
Top View  
OE  
WE  
1
2
3
4
I/O0 - I/O7  
NC  
A
B
C
D
E
F
A7 A18 A14 A13  
A6 A16 A17 A8  
A5 A15 WE A9  
A4 A12 VCC A11  
A3 I/O0 I/O3 I/O7  
A2 I/O1 I/O4 CE  
A1 I/O2 I/O5 A10  
A0 GND I/O6 OE  
TSOP Top View  
Type 1  
A11  
A9  
1
32  
OE  
2
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
A10  
CE  
A8  
3
A13  
A14  
A17  
WE  
VCC  
A18  
A16  
A15  
A12  
A7  
4
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
GND  
I/O2  
I/O1  
I/O0  
A0  
5
6
7
8
9
G
H
10  
11  
12  
13  
14  
15  
16  
A6  
A1  
A5  
A2  
Rev. 0383D–FLASH–02/02  
A4  
A3  

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