Datasheet > 存储 > 闪存> AT29BV040A-20JU

AT29BV040A-20JU

更新时间： 2024-11-08 06:38:19

品牌	Logo	应用领域
爱特美尔 - ATMEL		闪存电池
页数	文件大小	规格书
16页	362K
描述
4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

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数据手册
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AT29BV040A-20JU 数据手册

Features

• Single Supply Voltage, Range 2.7V to 3.6V

• Single Supply for Read and Write

• Software Protected Programming

• Fast Read Access Time – 200 ns

• Low Power Dissipation

– 15 mA Active Current

– 50 µA CMOS Standby Current

• Sector Program Operation

4-megabit

(512K x 8)

Single 2.7-volt

Battery-Voltage

Flash Memory

– Single Cycle Reprogram (Erase and Program)

– 2048 Sectors (256 Bytes/Sector)

– Internal Address and Data Latches for 256 Bytes

• Two 16K Bytes Boot Blocks with Lockout

• Fast Sector Program Cycle Time – 20 ms Max.

• Internal Program Control and Timer

• DATA Polling for End of Program Detection

• Minimum Endurance 10,000 Cycles

• CMOS and TTL Compatible Inputs and Outputs

• Green (Pb/Halide-free) Packaging Option

AT29BV040A

1. Description

The AT29BV040A is a 3-volt-only in-system Flash Programmable and Erasable Read

Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by

8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,

the device offers access times to 200 ns, and a low 54 mW power dissipation. When

the device is deselected, the CMOS standby current is less than 50 µA. The device

endurance is such that any sector can be written to in excess of 10,000 times. The

programming algorithm is compatible with other devices in Atmel’s 2.7-volt-only Flash

memories.

To allow for simple in-system reprogrammability, the AT29BV040A does not require

high input voltages for programming. The device can be operated with a single 2.7V to

3.6V supply. Reading data out of the device is similar to reading from an EPROM.

Reprogramming the AT29BV040A is performed on a sector basis; 256 bytes of data

are loaded into the device and then simultaneously programmed.

During a reprogram cycle, the address locations and 256 bytes of data are captured at

microprocessor speed and internally latched, freeing the address and data bus for

other operations. Following the initiation of a program cycle, the device will automati-

cally erase the sector and then program the latched data using an internal control

timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the

end of a program cycle has been detected, a new access for a read or program can

begin.

0383J–FLASH–9/08

12 3 4 5 6 7...16

中文翻译

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AT29BV040A-20JU 替代型号

型号	品牌	替代类型	描述	数据表
AT29LV040A-15JI	ATMEL	类似代替	4-megabit (512K x 8) 3-volt Only 256-byte Sector Flash Memory

与AT29BV040A-20JU相关器件

型号	品牌	获取价格	描述	数据表
AT29BV040A-20TC	ATMEL	获取价格	4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory
AT29BV040A-20TI	ATMEL	获取价格	4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory
AT29BV040A-20TU	ATMEL	获取价格	4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT29BV040A-25	ATMEL	获取价格	4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory
AT29BV040A-25CC	ETC	获取价格	EEPROM\|FLASH\|512KX8\|CMOS\|BGA\|32PIN\|PLASTIC
AT29BV040A-25CI	ETC	获取价格	EEPROM\|FLASH\|512KX8\|CMOS\|BGA\|32PIN\|PLASTIC
AT29BV040A-25TC	ATMEL	获取价格	4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory
AT29BV040A-25TCT/R	ATMEL	获取价格	Flash, 512KX8, 250ns, PDSO32, PLASTIC, TSOP-32
AT29BV040A-25TI	ATMEL	获取价格	4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory
AT29BV040A-25TIT/R	ATMEL	获取价格	Flash, 512KX8, 250ns, PDSO32, PLASTIC, TSOP-32

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