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AT29BV040A-25TU PDF预览

AT29BV040A-25TU

更新时间： 2024-12-01 20:59:35
品牌 Logo 应用领域
爱特美尔 - ATMEL 光电二极管内存集成电路
页数 文件大小 规格书
16页 361K
描述
Flash, 512KX8, 250ns, PDSO32, 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32

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中文翻译

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AT29BV040A-25TU 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：TSOP1包装说明：8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32
针数：32Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.82最长访问时间：250 ns
JESD-30 代码：R-PDSO-G32JESD-609代码：e3
长度：18.4 mm内存密度：4194304 bit
内存集成电路类型：FLASH内存宽度：8
湿度敏感等级：3功能数量：1
端子数量：32字数：524288 words
字数代码：512000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：512KX8封装主体材料：PLASTIC/EPOXY
封装代码：TSSOP封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行：PARALLEL
峰值回流温度（摄氏度）：260编程电压：2.7 V
认证状态：Not Qualified座面最大高度：1.2 mm
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：MATTE TIN端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：30类型：NOR TYPE
宽度：8 mm最长写入周期时间 (tWC)：20 ms
Base Number Matches：1

AT29BV040A-25TU 数据手册

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Features  
•
•
•
•
•
Single Supply Voltage, Range 2.7V to 3.6V  
Single Supply for Read and Write  
Software Protected Programming  
Fast Read Access Time – 200 ns  
Low Power Dissipation  
– 15 mA Active Current  
– 40 µA CMOS Standby Current  
•
Sector Program Operation  
4-megabit  
(512K x 8)  
Single 2.7-volt  
Battery-Voltage  
Flash Memory  
– Single Cycle Reprogram (Erase and Program)  
– 2048 Sectors (256 Bytes/Sector)  
– Internal Address and Data Latches for 256 Bytes  
Two 16K Bytes Boot Blocks with Lockout  
Fast Sector Program Cycle Time – 20 ms Max.  
Internal Program Control and Timer  
DATA Polling for End of Program Detection  
Minimum Endurance 10,000 Cycles  
CMOS and TTL Compatible Inputs and Outputs  
Commercial and Industrial Temperature Ranges  
Green (Pb/Halide-free) Packaging Option  
•
•
•
•
•
•
•
•
AT29BV040A  
1. Description  
The AT29BV040A is a 3-volt-only in-system Flash Programmable and Erasable Read  
Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by  
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,  
the device offers access times to 200 ns, and a low 54 mW power dissipation. When  
the device is deselected, the CMOS standby current is less than 40 µA. The device  
endurance is such that any sector can be written to in excess of 10,000 times. The  
programming algorithm is compatible with other devices in Atmel’s 2.7-volt-only Flash  
memories.  
To allow for simple in-system reprogrammability, the AT29BV040A does not require  
high input voltages for programming. The device can be operated with a single 2.7V to  
3.6V supply. Reading data out of the device is similar to reading from an EPROM.  
Reprogramming the AT29BV040A is performed on a sector basis; 256 bytes of data  
are loaded into the device and then simultaneously programmed.  
During a reprogram cycle, the address locations and 256 bytes of data are captured at  
microprocessor speed and internally latched, freeing the address and data bus for  
other operations. Following the initiation of a program cycle, the device will automati-  
cally erase the sector and then program the latched data using an internal control  
timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the  
end of a program cycle has been detected, a new access for a read or program can  
begin.  
0383I–FLASH–7/06  
1234567...16

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与AT29BV040A-25TU相关器件

型号 品牌 获取价格 描述 数据表
AT29BV040A-25TUT/R ATMEL

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 		Flash, 512KX8, 250ns, PDSO32, PLASTIC, TSOP-32
AT29BV040A-35 ATMEL

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 		4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory
AT29BV040A-35CC ATMEL

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 		Flash, 512KX8, 350ns, PBGA32, 5 X 10 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, PLASTIC, CSBGA-32
AT29BV040A-35CI ATMEL

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 		Flash, 512KX8, 350ns, PBGA32, 5 X 10 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, PLASTIC, CSBGA-32
AT29BV040A-35TC ATMEL

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 		4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory
AT29BV040A-35TCT/R ATMEL

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 		Flash, 512KX8, 350ns, PDSO32, PLASTIC, TSOP-32
AT29BV040A-35TI ATMEL

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 		4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory
AT29BV040A-35TIT/R ATMEL

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 		Flash, 512KX8, 350ns, PDSO32, PLASTIC, TSOP-32
AT29BV040A-35TU ATMEL

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 		Flash, 512KX8, 350ns, PDSO32, 8 X 20 MM, PLASTIC, TSOP1-32
AT29BV040A-35TUT/R ATMEL

获取价格

 		Flash, 512KX8, 350ns, PDSO32, PLASTIC, TSOP-32

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