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AT29BV020-35TU PDF预览

AT29BV020-35TU

更新时间: 2024-12-01 19:58:27
品牌 Logo 应用领域
爱特美尔 - ATMEL 光电二极管内存集成电路
页数 文件大小 规格书
16页 375K
描述
Flash, 256KX8, 350ns, PDSO32, 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32

AT29BV020-35TU 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32
针数:32Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.84最长访问时间:350 ns
启动块:BOTTOM/TOPJESD-30 代码:R-PDSO-G32
JESD-609代码:e3长度:18.4 mm
内存密度:2097152 bit内存集成电路类型:FLASH
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:32
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
类型:NOR TYPE宽度:8 mm
最长写入周期时间 (tWC):20 msBase Number Matches:1

AT29BV020-35TU 数据手册

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Features  
Single Supply Voltage, Range 2.7V to 3.6V  
Single Supply for Read and Write  
Software Protected Programming  
Fast Read Access Time – 120 ns  
Low Power Dissipation  
– 15 mA Active Current  
– 40 µA CMOS Standby Current  
Sector Program Operation  
2-megabit  
(256K x 8)  
Single 2.7-volt  
Battery-Voltage  
Flash Memory  
– Single Cycle Reprogram (Erase and Program)  
– 1024 Sectors (256 Bytes/Sector)  
– Internal Address and Data Latches for 256 Bytes  
Two 8K Bytes Boot Blocks with Lockout  
Fast Sector Program Cycle Time – 20 ms Max  
Internal Program Control and Timer  
DATA Polling for End of Program Detection  
Typical Endurance > 10,000 Cycles  
CMOS and TTL Compatible Inputs and Outputs  
Commercial and Industrial Temperature Ranges  
Green (Pb/Halide-free) Packaging Option  
AT29BV020  
1. Description  
The AT29BV020 is a 2.7-volt-only in-system Flash Programmable and Erasable Read  
Only Memory (PEROM). Its 2 megabits of memory is organized as 262,144 words by  
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,  
the device offers access times to 120 ns, and a low 54 mW power dissipation. When  
the device is deselected, the CMOS standby current is less than 40 µA. The device  
endurance is such that any sector can typically be written to in excess of 10,000  
times. The programming algorithm is compatible with other devices in Atmel’s Low  
Voltage Flash family of products.  
To allow for simple in-system reprogrammability, the AT29BV020 does not require  
high input voltages for programming. The device can be operated with a single 2.7V to  
3.6V supply. Reading data out of the device is similar to reading from an EPROM.  
Reprogramming the AT29BV020 is performed on a sector basis; 256 bytes of data are  
loaded into the device and then simultaneously programmed.  
During a reprogram cycle, the address locations and 256 bytes of data are captured at  
microprocessor speed and internally latched, freeing the address and data bus for  
other operations. Following the initiation of a program cycle, the device will automati-  
cally erase the sector and then program the latched data using an internal control  
timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the  
end of a program cycle has been detected, a new access for a read or program can  
begin.  
0402E–FLASH–2/05  

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