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AT28C010-25LIE PDF预览

AT28C010-25LIE

更新时间: 2024-02-28 16:49:39
品牌 Logo 应用领域
爱特美尔 - ATMEL 可编程只读存储器
页数 文件大小 规格书
11页 660K
描述
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AT28C010-25LIE 数据手册

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AT28C010 Mil  
Features  
Fast Read Access Time - 120 ns  
Automatic Page Write Operation  
Internal Address and Data Latches for 128-Bytes  
Internal Control Timer  
Fast Write Cycle Time  
Page Write Cycle Time - 10 ms Maximum  
1 to 128-Byte Page Write Operation  
Low Power Dissipation  
80 mA Active Current  
1 Megabit  
(128K x 8)  
Paged  
300 µA CMOS Standby Current  
Hardware and Software Data Protection  
DATA Polling for End of Write Detection  
High Reliability CMOS Technology  
Endurance: 104 or 105 Cycles  
Data Retention: 10 Years  
Single 5V ± 10% Supply  
CMOS and TTL Compatible Inputs and Outputs  
JEDEC Approved Byte-Wide Pinout  
CMOS  
E2PROM  
Description  
The AT28C010 is a high-performance Electrically Erasable and Programmable Read  
Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits.  
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers  
(continued)  
Military  
Pin Configurations  
44 LCC  
Pin Name  
A0 - A16  
CE  
Function  
Top View  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
Data Inputs/Outputs  
No Connect  
OE  
AT28C010 Mil  
WE  
I/O0 - I/O7  
NC  
CERDIP, FLATPACK  
Top View  
PGA  
Top View  
32 LCC  
Top View  
0353C  
2-243  

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