Datasheet > AT28C010-DWFM

AT28C010-DWFM

更新时间： 2024-09-27 03:52:59

品牌	Logo	应用领域
美国微芯 - MICROCHIP		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
17页	432K
描述
EEPROM, 128KX8, Parallel, CMOS, WAFER

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中文翻译

获取价格

数据手册

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AT28C010-DWFM 数据手册

Features

• Fast Read Access Time - 120 ns

• Automatic Page Write Operation

– Internal Address and Data Latches for 128-Bytes

– Internal Control Timer

• Fast Write Cycle Time

AT28C010 Mil

– Page Write Cycle Time - 10 ms Maximum

– 1 to 128-Byte Page Write Operation

• Low Power Dissipation

– 80 mA Active Current

1-Megabit

(128K x 8)

Paged Parallel

EEPROMs

– 300µA CMOS Standby Current

• Hardware and Software Data Protection

• DATA Polling for End of Write Detection

• High Reliability CMOS Technology

– Endurance: 10⁴or 10⁵Cycles

– Data Retention: 10 Years

• Single 5V  10% Supply

• CMOS and TTL Compatible Inputs and Outputs

• JEDEC Approved Byte-Wide Pinout

AT28C010

Military

(continued)

Pin Configuration

32 LCC

Top View

Pin Name

A0 - A16

Function

Addresses

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

No Connect

A2 10

A1 11

A0 12

I/O0 13

29 A14

28 A13

27 A8

26 A9

25 A11

24 OE

23 A10

22 CE

21 I/O7

I/O0 - I/O7

CERDIP, FLATPACK

Top View

44 LCC

Top View

A16

A15

A12

32 VCC

31 WE

30 NC

29 A14

28 A13

27 A8

PGA

Top View

A12

39 A13

38 A8

37 A9

36 A11

35 NC

34 NC

33 NC

32 NC

31 OE

30 A10

29 CE

A5 10

NC 11

NC 12

NC 13

A4 14

A3 15

A2 16

A1 17

26 A9

25 A11

24 OE

23 A10

22 CE

21 I/O7

20 I/O6

19 I/O5

18 I/O4

17 I/O3

A2 10

A1 11

A0 12

I/O0 13

I/O1 14

I/O2 15

GND 16

Atmel-0010I-PEEPR-AT28C010-Datasheet_062015

12 3 4 5 6 7...17

中文翻译

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与AT28C010-DWFM相关器件

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AT28C010E-12BM/883	ATMEL	获取价格	EEPROM, 128KX8, 120ns, Parallel, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
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