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AT28C010E-12EM PDF预览

AT28C010E-12EM

更新时间: 2024-11-02 02:49:11
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
31页 524K
描述
Military Grade 1-Mbit (131,072 x 8) Paged Parallel EEPROM

AT28C010E-12EM 数据手册

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AT28C010  
Military Grade 1-Mbit (131,072 x 8) Paged Parallel EEPROM  
Features  
Fast Read Access Time: 120 ns  
Automatic Page Write Operation:  
– Internally organized as 131,072 x 8 (1 Mbit)  
– Internal address and data latches for 128 bytes  
– Internal control timer  
Fast Write Cycle Time:  
– Page Write cycle time: 10 ms maximum  
– 1 to 128-byte Page Write operation  
Low-Power Dissipation:  
– 80 mA active current  
– 300 µA CMOS standby current  
Hardware and Software Data Protection  
DATA Polling for End of Write Detection  
High Reliability CMOS Technology:  
– Endurance: 10,000 or 100,000 cycles  
– Data retention: 10 years  
Single 5V ± 10% Supply  
CMOS and TTL Compatible Inputs and Outputs  
JEDEC® Approved Byte-Wide Pinout  
Packages  
32-Lead CERDIP, 32-Lead Flatpack, 32-Lead CLCC and 30-Pin PGA  
DS20006311A-page 1  
© 2020 Microchip Technology Inc.  

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