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AT28C010E-12TC PDF预览

AT28C010E-12TC

更新时间: 2024-02-06 23:46:18
品牌 Logo 应用领域
爱特美尔 - ATMEL 可编程只读存储器
页数 文件大小 规格书
11页 574K
描述
1 Megabit 128K x 8 Paged CMOS E2PROM

AT28C010E-12TC 数据手册

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AT28C010 Com/Ind  
Features  
Fast Read Access Time - 120 ns  
Automatic Page Write Operation  
Internal Address and Data Latches for 128-Bytes  
Internal Control Timer  
Fast Write Cycle Time  
Page Write Cycle Time - 10 ms Maximum  
1 to 128-Byte Page Write Operation  
Low Power Dissipation  
40 mA Active Current  
1 Megabit  
(128K x 8)  
Paged  
200 µA CMOS Standby Current  
Hardware and Software Data Protection  
DATA Polling for End of Write Detection  
High Reliability CMOS Technology  
Endurance: 104 or 105 Cycles  
Data Retention: 10 Years  
Single 5V ± 10% Supply  
CMOS and TTL Compatible Inputs and Outputs  
JEDEC Approved Byte-Wide Pinout  
Commercial and Industrial Temperature Ranges  
CMOS  
E2PROM  
Description  
The AT28C010 is a high-performance Electrically Erasable and Programmable Read  
Only Memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits.  
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers  
access times to 120 ns with power dissipation of just 220 mW. When the device is  
deselected, the CMOS standby current is less than 200 µA.  
Commercial  
and  
Industrial  
(continued)  
Pin Configurations  
TSOP  
Top View  
Pin Name  
A0 - A16  
CE  
Function  
Addresses  
AT28C010 Com/Ind  
Chip Enable  
Output Enable  
Write Enable  
OE  
WE  
Data  
Inputs/Outputs  
I/O0 - I/O7  
NC  
DC  
No Connect  
Don’t Connect  
PLCC  
PDIP  
Top View  
Top View  
Note: PLCC package pin 1  
is a DON’T CONNECT.  
0353C  
2-231  

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