Datasheet > AT28C010E-12DM

AT28C010E-12DM

更新时间： 2024-02-17 23:45:04

品牌	Logo	应用领域
美国微芯 - MICROCHIP		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
31页	524K
描述
Military Grade 1-Mbit (131,072 x 8) Paged Parallel EEPROM

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AT28C010E-12DM 数据手册

AT28C010

Military Grade 1-Mbit (131,072 x 8) Paged Parallel EEPROM

Features

•

Fast Read Access Time: 120 ns

Automatic Page Write Operation:

– Internally organized as 131,072 x 8 (1 Mbit)

– Internal address and data latches for 128 bytes

– Internal control timer

•

Fast Write Cycle Time:

– Page Write cycle time: 10 ms maximum

– 1 to 128-byte Page Write operation

Low-Power Dissipation:

– 80 mA active current

– 300 µA CMOS standby current

Hardware and Software Data Protection

DATA Polling for End of Write Detection

High Reliability CMOS Technology:

– Endurance: 10,000 or 100,000 cycles

– Data retention: 10 years

•

Single 5V ± 10% Supply

CMOS and TTL Compatible Inputs and Outputs

JEDEC^®Approved Byte-Wide Pinout

Packages

•

32-Lead CERDIP, 32-Lead Flatpack, 32-Lead CLCC and 30-Pin PGA

DS20006311A-page 1

12 3 4 5 6 7...31

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型号	品牌	获取价格	描述	数据表
AT28C010E-12DM/883	ATMEL	获取价格	1 Megabit 128K x 8 Paged CMOS E2PROM
AT28C010E-12DM/883	MICROCHIP	获取价格	EEPROM, 128KX8, 120ns, Parallel, CMOS, CDIP32
AT28C010E-12EM	MICROCHIP	获取价格	Military Grade 1-Mbit (131,072 x 8) Paged Parallel EEPROM
AT28C010E-12EM/883	ATMEL	获取价格	1 Megabit 128K x 8 Paged CMOS E2PROM
AT28C010E-12EM/883	MICROCHIP	获取价格	Military Grade 1-Mbit (131,072 x 8) Paged Parallel EEPROM
AT28C010E-12FM	MICROCHIP	获取价格	Military Grade 1-Mbit (131,072 x 8) Paged Parallel EEPROM
AT28C010E-12FM/883	MICROCHIP	获取价格	Military Grade 1-Mbit (131,072 x 8) Paged Parallel EEPROM
AT28C010E-12JC	ATMEL	获取价格	1 Megabit 128K x 8 Paged CMOS E2PROM
AT28C010E-12JCT/R	ATMEL	获取价格	EEPROM, 128KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32
AT28C010E-12JI	ATMEL	获取价格	1 Megabit 128K x 8 Paged CMOS E2PROM