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ASDM540G PDF预览

ASDM540G

更新时间: 2024-10-31 17:15:55
品牌 Logo 应用领域
安森德 - ASDsemi /
页数 文件大小 规格书
8页 1754K
描述
TO-263

ASDM540G 数据手册

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ASDM540G  
100V N-Channel MOSFET  
Feature  
High density cell design for lower Rdson  
Fully characterized avalanche voltage and current  
Good stability and uniformity with high EAS  
Excellent package for good heat dissipation  
Product Summary  
VDS  
100  
V
m  
A
RDS(on),Typ@VGS=10V  
ID  
31  
33  
Application  
Power switching application  
Hard switched and High frequency circuits  
Uninterruptible power supply  
G
D
S
TO-263  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
Limit  
Unit  
V
100  
±20  
Gate-Source Voltage  
V
VGS  
Drain Current-Continuous  
33  
A
ID  
Drain Current-Pulsed (Note 1)  
132  
A
IDM  
70  
W
mJ  
Maximum Power Dissipation(Tc=25)  
Single pulse avalanche energy(Note 2)  
Operating Junction and Storage Temperature Range  
PD  
96  
EAS  
-55 To 175  
TJ,TSTG  
Thermal Characteristic  
1.15  
40  
/W  
/W  
Thermal Resistance,Junction-to-Case  
RθJC  
RθJA  
Thermal Resistance,Junction-to-Ambient(PCB mount)  
www.ascendsemi.com  
0755-86970486  
Aug 2021 Version1.1  
1/8  

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