Datasheet > ASDM60N30KQ

ASDM60N30KQ

更新时间： 2024-09-14 17:15:35

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
9页	1813K
描述
TO-252

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数据手册

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ASDM60N30KQ 数据手册

ASDM60N30KQ

60V N-Channel MOSFET

General Features

Product Summary

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

BVDSS

mΩ

RDS(on),Typ.@ VGS=10V

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

TO-252

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

V^DS

V^GS

Gate-Source Voltage

±20

Drain Current-Continuous

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

120

Maximum Power Dissipation

Derating factor

Single pulse avalanche energy ^{(Note 5)}

W/℃

P_D

0.3

E_AS

Operating Junction and Storage Temperature Range

-55 To 150

℃

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_θJC

3.3

℃/W

www.ascendsemi.com

0755-86970486

NOV 2020 Version1.0

1/9

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