APTGT75DH60T3G

更新时间： 2024-12-01 06:37:31

品牌	Logo	应用领域
美高森美 - MICROSEMI		双极性晶体管
页数	文件大小	规格书
5页	199K
描述
Asymmetrical - Bridge Trench + Field Stop IGBT Power Module

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中文翻译

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数据手册

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APTGT75DH60T3G 数据手册

APTGT75DH60T3G

Asymmetrical - Bridge

Trench + Field Stop IGBT

Power Module

V_CES= 600V

I_C= 75A @ Tc = 80°C

13 14

Application

•

Welding converters

CR1

CR3

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

Features

•

Trench + Field Stop IGBT Technology

Low voltage drop

Low tail current

Switching frequency up to 20 kHz

Soft recovery parallel diodes

Low diode VF

CR2

CR4

Low leakage current

RBSOA and SCSOA rated

•

Very low stray inductance

Symmetrical design

•

Internal thermistor for temperature monitoring

High level of integration

28 27 26 25

23 22

20 19 18

Benefits

•

Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for

easy PCB mounting

10 11

•

Low profile

RoHS Compliant

All multiple inputs and outputs must be shorted together

Example: 13/14 ; 29/30 ; 22/23 …

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_CES

Collector - Emitter Breakdown Voltage

600

100

140

±20

250

T_C= 25°C

T_C= 80°C

T_C= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

T_C= 25°C

T_J= 150°C

RBSOA Reverse Bias Safe Operating Area

150A @ 550V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

1 – 5

www.microsemi.com

12 3 4 5

中文翻译

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