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APT50GS60BR(G)

更新时间： 2024-11-23 13:05:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 双极性晶体管
页数 文件大小 规格书
7页 609K
描述
Insulated Gate Bipolar Transistor, 93A I(C), 600V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT PACKAGE-3

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APT50GS60BR(G) 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：TO-247AD
包装说明：ROHS COMPLIANT PACKAGE-3针数：3
Reach Compliance Code：compliant风险等级：5.63
Is Samacsys：N外壳连接：COLLECTOR
最大集电极电流 (IC)：93 A集电极-发射极最大电压：600 V
配置：SINGLEJEDEC-95代码：TO-247AD
JESD-30 代码：R-PSFM-T3JESD-609代码：e1
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：NO
端子面层：TIN SILVER COPPER端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：MOTOR CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：273 ns标称接通时间 (ton)：66 ns
Base Number Matches：1

APT50GS60BR(G) 数据手册

 浏览型号APT50GS60BR(G)的Datasheet PDF文件第2页浏览型号APT50GS60BR(G)的Datasheet PDF文件第3页浏览型号APT50GS60BR(G)的Datasheet PDF文件第4页浏览型号APT50GS60BR(G)的Datasheet PDF文件第5页浏览型号APT50GS60BR(G)的Datasheet PDF文件第6页浏览型号APT50GS60BR(G)的Datasheet PDF文件第7页 
APT50GS60BR(G)  
APT50GS60SR(G)  
600V, 50A, V  
= 2.8V Typical  
CE(ON)  
Thunderbolt® High Speed NPT IGBT  
The Thunderbolt HS™ series is based on thin wafer non-punch through (NPT) technology similar to  
the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low  
switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET  
performance but lower cost.  
An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefficient  
make it easy to parallel Thunderbolts HS™ IGBT's. Controlled slew rates result in very good noise  
and oscillation immunity and low EMI. The short circuit duration rating of 10µs make these IGBT's  
suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy  
ruggedness. Combi versions are packaged with a high speed, soft recovery DQ series diode.  
D3PAK  
APT50GS60BR(G)  
APT50GS60SR(G)  
Features  
Typical Applications  
• Fast Switching with low EMI  
• Very Low EOFF for Maximum Efficiency  
• ZVS Phase Shifted and other Full Bridge  
• Half Bridge  
• Short circuit rated  
• Low Gate Charge  
• High Power PFC Boost  
• Welding  
C
E
• Tight parameter distribution  
• Easy paralleling  
• Induction heating  
• High Frequency SMPS  
G
• RoHS Compliant  
Absolute Maximum Ratings  
Symbol Parameter  
Rating  
Unit  
A
Continuous Collector Current T = @ 25°C  
IC1  
IC1  
93  
50  
C
Continuous Collector Current T = @ 100°C  
C
1
ICM  
VGE  
Pulsed Collector Current  
195  
±30V  
195  
280  
10  
Gate-Emitter Voltage  
V
SSOA  
EAS  
Switching Safe Operating Area  
2
Single Pulse Avalanche Energy  
mJ  
µs  
3
tSC  
Short Circut Withstand Time  
Thermal and Mechanical Characteristics  
Symbol Parameter  
Min  
Typ  
Max  
415  
0.30  
-
Unit  
PD  
RθJC  
Total Power Dissipation T = @ 25°C  
C
-
-
W
Junction to Case Thermal Resistance  
IGBT  
-
-
°C/W  
°C  
RθCS  
TJ, TSTG  
TL  
Case to Sink Thermal Resistance, Flat Greased Surface  
Operating and Storage Junction Temperature Range  
-
0.11  
-55  
-
150  
300  
-
Soldering Temperature for 10 Seconds (1.6mm from case)  
Package Weight  
-
-
-
-
-
-
0.22  
5.9  
-
oz  
g
WT  
-
10  
in·lbf  
N·m  
Torque Mounting Torque (TO-247), 6-32 M3 Screw  
-
1.1  
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed.  
Microsemi Website - http://www.microsemi.com  
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