Datasheet > 晶体管 > IGBT> APT50GS60BRG

APT50GS60BRG

更新时间： 2024-11-23 06:37:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管双极性晶体管
页数	文件大小	规格书
7页	609K
描述
Thunderbolt High Speed NPT IGBT

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中文翻译

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技术参数
数据手册

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APT50GS60BRG 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.72	Is Samacsys：	N
Base Number Matches：	1

APT50GS60BRG 数据手册

APT50GS60BR(G)

APT50GS60SR(G)

600V, 50A, V

= 2.8V Typical

CE(ON)

Thunderbolt^®High Speed NPT IGBT

The Thunderbolt HS^™series is based on thin wafer non-punch through (NPT) technology similar to

the Thunderbolt^®series, but trades higher V_CE(ON)for signiﬁcantly lower turn-on energy E_off. The low

switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET

performance but lower cost.

An extremely tight parameter distribution combined with a positive V_CE(ON)temperature coefﬁcient

make it easy to parallel Thunderbolts HS^™IGBT's. Controlled slew rates result in very good noise

and oscillation immunity and low EMI. The short circuit duration rating of 10µs make these IGBT's

suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy

ruggedness. Combi versions are packaged with a high speed, soft recovery DQ series diode.

D³PAK

APT50GS60BR(G)

APT50GS60SR(G)

Features

Typical Applications

• Fast Switching with low EMI

• Very Low E_OFFfor Maximum Efﬁciency

• ZVS Phase Shifted and other Full Bridge

• Half Bridge

• Short circuit rated

• Low Gate Charge

• High Power PFC Boost

• Welding

• Tight parameter distribution

• Easy paralleling

• Induction heating

• High Frequency SMPS

• RoHS Compliant

Absolute Maximum Ratings

Symbol Parameter

Rating

Unit

Continuous Collector Current T = @ 25°C

I_C1

Continuous Collector Current T = @ 100°C

I_CM

V_GE

Pulsed Collector Current

195

±30V

195

280

Gate-Emitter Voltage

SSOA

E_AS

Switching Safe Operating Area

Single Pulse Avalanche Energy

µs

t_SC

Short Circut Withstand Time

Thermal and Mechanical Characteristics

Symbol Parameter

Min

Typ

Max

415

0.30

Unit

P_D

R_θJC

Total Power Dissipation T = @ 25°C

Junction to Case Thermal Resistance

IGBT

°C/W

°C

R_θCS

T_J, T_STG

T_L

Case to Sink Thermal Resistance, Flat Greased Surface

Operating and Storage Junction Temperature Range

0.11

-55

150

300

Soldering Temperature for 10 Seconds (1.6mm from case)

Package Weight

0.22

5.9

W_T

in·lbf

N·m

Torque Mounting Torque (TO-247), 6-32 M3 Screw

1.1

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed.

Microsemi Website - http://www.microsemi.com

12 3 4 5 6 7

中文翻译

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与APT50GS60BRG相关器件

型号	品牌	获取价格	描述	数据表
APT50GS60SR	MICROSEMI	获取价格	Thunderbolt High Speed NPT IGBT
APT50GS60SR(G)	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 93A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, D3P
APT50GS60SRDQ2	MICROSEMI	获取价格	Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode
APT50GS60SRDQ2(G)	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 93A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, D3P
APT50GS60SRDQ2G	MICROSEMI	获取价格	Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode
APT50GS60SRG	MICROSEMI	获取价格	Thunderbolt High Speed NPT IGBT
APT50GT120B2R	MICROSEMI	获取价格	Thunderbolt IGBT
APT50GT120B2RDL	MICROSEMI	获取价格	Resonant Mode IGBT
APT50GT120B2RDLG	MICROSEMI	获取价格	Resonant Mode IGBT
APT50GT120B2RDQ2G	MICROSEMI	获取价格	Thunderbolt IGBT

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