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APT50GT120JU2-Module PDF预览

APT50GT120JU2-Module

更新时间: 2024-11-25 14:56:03
品牌 Logo 应用领域
美国微芯 - MICROCHIP 双极性晶体管
页数 文件大小 规格书
8页 564K
描述
Configuration: Boost chopperVCES (V): 1200VCESat (V): 1.7Current (A) Tc=80C: 50Silicon type: TRENCH 3 IGBT Package: SOT227

APT50GT120JU2-Module 数据手册

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APT50GT120JU2  
ISOTOP® Boost chopper  
Trench + Field Stop IGBT3  
VCES = 1200V  
IC = 50A @ Tc = 80°C  
K
Application  
AC and DC motor control  
Switched Mode Power Supplies  
Power Factor Correction  
Brake switch  
C
Features  
G
Trench + Field Stop IGBT3 Technology  
-
-
-
-
-
-
-
Low voltage drop  
Low tail current  
Switching frequency up to 20 kHz  
Soft recovery parallel diodes  
Low diode VF  
E
Low leakage current  
RBSOA and SCSOA rated  
ISOTOP® Package (SOT-227)  
Very low stray inductance  
High level of integration  
K
E
Benefits  
Low conduction losses  
Stable temperature behavior  
Very rugged  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
RoHS Compliant  
C
G
ISOTOP  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
IC1  
IC2  
ICM  
VGE  
PD  
Collector - Emitter Breakdown Voltage  
1200  
75  
50  
100  
±20  
347  
V
TC = 25°C  
TC = 80°C  
TC = 25°C  
Continuous Collector Current  
A
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
V
W
TC = 25°C  
IFAV  
Maximum Average Forward Current  
Duty cycle=0.5 TC = 80°C  
27  
34  
A
IFRMS  
RMS Forward Current (Square wave, 50% duty)  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
1 - 8  
www.microsemi.com  

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