Datasheet > APT50GS60SRDQ2

APT50GS60SRDQ2

更新时间： 2024-11-23 06:37:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管双极性晶体管
页数	文件大小	规格书
7页	610K
描述
Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode

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中文翻译

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数据手册

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APT50GS60SRDQ2 数据手册

APT50GS60BRDQ2(G)

APT50GS60SRDQ2(G)

600V, 50A, V

= 2.8V Typical

CE(ON)

Thunderbolt^®High Speed NPT IGBT with Anti-Parallel 'DQ' Diode

The Thunderbolt HS^™series is based on thin wafer non-punch through (NPT) technology similar to

the Thunderbolt^®series, but trades higher V_CE(ON)for signiﬁcantly lower turn-on energy E_off. The low

switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET

performance but lower cost.

An extremely tight parameter distribution combined with a positive V_CE(ON)temperature coefﬁcient

make it easy to parallel Thunderbolts HS^™IGBT's. Controlled slew rates result in very good noise

and oscillation immunity and low EMI. The short circuit duration rating of 10µs make these IGBT's

suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy

ruggedness. Combi versions are packaged with a high speed, soft recovery DQ series diode.

D³PAK

APT50GS60BRDQ2(G)

Features

Typical Applications

APT50GS60SRDQ2(G)

• Fast Switching with low EMI

• Very Low E_OFFfor Maximum Efﬁciency

• ZVS Phase Shifted and other Full Bridge

• Half Bridge

Single die

IGBT with

separate DQ

diode die

• Short circuit rated

• Low Gate Charge

• High Power PFC Boost

• Welding

• Tight parameter distribution

• Easy paralleling

• Induction heating

• High Frequency SMPS

• RoHS Compliant

Absolute Maximum Ratings

Symbol Parameter

Rating

Unit

Continuous Collector Current T = @ 25°C

I_C1

Continuous Collector Current T = @ 100°C

195

±30V

195

280

I_CM

V_GE

Pulsed Collector Current

Gate-Emitter Voltage

SSOA

E_AS

Switching Safe Operating Area

Single Pulse Avalanche Energy

µs

t_SC

Short Circut Withstand Time

= 25°C

I_F

Diode Continuous Forward Current

= 100°C

I_FRM

Diode Max. Repetitive Forward Current

195

Thermal and Mechanical Characteristics

Symbol Parameter

Min

Typ

Max

415

0.30

0.67

Unit

P_D

Total Power Dissipation T = @ 25°C

IGBT

R_θJC

Junction to Case Thermal Resistance

Diode

°C/W

R_θCS

T_J, T_STG

T_L

Case to Sink Thermal Resistance, Flat Greased Surface

Operating and Storage Junction Temperature Range

0.11

-55

150

300

°C

Soldering Temperature for 10 Seconds (1.6mm from case)

Package Weight

0.22

5.9

W_T

in·lbf

N·m

Torque Mounting Torque (TO-247), 6-32 M3 Screw

1.1

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed.

Microsemi Website - http://www.microsemi.com

12 3 4 5 6 7

中文翻译

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与APT50GS60SRDQ2相关器件

型号	品牌	获取价格	描述	数据表
APT50GS60SRDQ2(G)	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 93A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, D3P
APT50GS60SRDQ2G	MICROSEMI	获取价格	Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode
APT50GS60SRG	MICROSEMI	获取价格	Thunderbolt High Speed NPT IGBT
APT50GT120B2R	MICROSEMI	获取价格	Thunderbolt IGBT
APT50GT120B2RDL	MICROSEMI	获取价格	Resonant Mode IGBT
APT50GT120B2RDLG	MICROSEMI	获取价格	Resonant Mode IGBT
APT50GT120B2RDQ2G	MICROSEMI	获取价格	Thunderbolt IGBT
APT50GT120B2RG	MICROSEMI	获取价格	Thunderbolt IGBT
APT50GT120JRDQ2	ADPOW	获取价格	Thunderbolt IGBT
APT50GT120JU2	MICROSEMI	获取价格	Boost chopper Trench + Field Stop IGBT

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