Datasheet > APT10050B2VFR_04

APT10050B2VFR_04

更新时间： 2024-11-25 04:32:47

品牌	Logo	应用领域
ADPOW		高压
页数	文件大小	规格书
4页	67K
描述
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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APT10050B2VFR_04 数据手册

APT10050B2VFR

APT10050LVFR

1000V 21A 0.500Ω

B2VFR

POWER MOS V^®

Power MOS V^®is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V^®

also achieves faster switching speeds through optimized gate layout.

T-MAX™

TO-264

LVFR

• Identical Specifications: T-MAX™ or TO-264 Package

• Faster Switching

• Lower Leakage

• 100% Avalanche Tested

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT10050B2VFR_LVFR

UNIT

V_DSS

I_D

Drain-Source Voltage

1000

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

±30

±40

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

Watts

W/°C

520

P_D

4.16

-55 to 150

300

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

2500

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

1000

TYP

MAX

UNIT

BV_DSS

I_D(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

On State Drain Current

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

Amps

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, 0.5 I_D[Cont.])

Ohms

µA

0.500

250

1000

±100

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

I_DSS

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 2.5mA)

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

12 3 4

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与APT10050B2VFR_04相关器件

型号	品牌	获取价格	描述	数据表
APT10050B2VR	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10050B2VRG	MICROSEMI	获取价格	Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Met
APT10050CFN	ETC	获取价格	TRANSISTOR \| MOSFET POWER MODULE \| INDEPENDENT \| 1KV V(BR)DSS \| 24.5A I(D)
APT10050EN	ADPOW	获取价格	Transistor
APT10050FN	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 1KV V(BR)DSS \| 22.5A I(D) \| SIP-TAB
APT10050JLC	ADPOW	获取价格	Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement
APT10050JN	ADPOW	获取价格	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT10050JVFR	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10050JVFR_04	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10050JVR	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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