是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TO-247AD |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.12 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 1300 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 1000 V | 最大漏极电流 (ID): | 14 A |
最大漏源导通电阻: | 0.78 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-247AD | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 56 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT10078BFLL_06 | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT10078BFLLG | MICROSEMI |
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Power Field-Effect Transistor, 14A I(D), 1000V, 0.78ohm, 1-Element, N-Channel, Silicon, Me | |
APT10078BLL | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT10078BLL_04 | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT10078BLLG | MICROSEMI |
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暂无描述 | |
APT10078SFLL | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT10078SFLL | MICROSEMI |
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Power Field-Effect Transistor, 14A I(D), 1000V, 0.78ohm, 1-Element, N-Channel, Silicon, Me | |
APT10078SFLLG | MICROSEMI |
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Power Field-Effect Transistor, 14A I(D), 1000V, 0.78ohm, 1-Element, N-Channel, Silicon, Me | |
APT10078SLL | ADPOW |
获取价格 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT10078SLLG | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 1000V, 0.78ohm, 1-Element, N-Channel, Silicon, Me |