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APT10050JN PDF预览

APT10050JN

更新时间: 2024-02-12 21:55:04
品牌 Logo 应用领域
ADPOW 晶体晶体管功率场效应晶体管开关脉冲高压局域网高电压电源
页数 文件大小 规格书
4页 64K
描述
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT10050JN 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-264AA
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.21其他特性:HIGH VOLTAGE
雪崩能效等级(Eas):2500 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:1000 V
最大漏极电流 (ID):21 A最大漏源导通电阻:0.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-264AA
JESD-30 代码:R-PSFM-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):84 A
认证状态:Not Qualified表面贴装:NO
端子面层:TIN SILVER COPPER端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

APT10050JN 数据手册

 浏览型号APT10050JN的Datasheet PDF文件第2页浏览型号APT10050JN的Datasheet PDF文件第3页浏览型号APT10050JN的Datasheet PDF文件第4页 
S
D
S
S
D
G
G
SOT-227  
APT10050JN 1000V 20.5A 0.50  
ISOTOP®  
"UL Recognized" File No. E145592 (S)  
POWER MOS IV®  
SINGLE DIE ISOTOP® PACKAGE  
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS  
MAXIMUM RATINGS  
All Ratings: T = 25°C unless otherwise specified.  
C
APT  
Symbol Parameter  
10050JN  
1000  
20.5  
UNIT  
VDSS  
Volts  
Drain-Source Voltage  
ID  
Continuous Drain Current @ TC = 25°C  
Amps  
1
IDM, lLM  
VGS  
82  
Pulsed Drain Current  
and Inductive Current Clamped  
Gate-Source Voltage  
±30  
520  
4.16  
Volts  
Watts  
W/°C  
Total Power Dissipation @ TC = 25°C  
Linear Derating Factor  
PD  
TJ,TSTG  
TL  
Operating and Storage Junction Temperature Range  
Lead Temperature: 0.063" from Case for 10 Sec.  
-55 to 150  
300  
°C  
STATIC ELECTRICAL CHARACTERISTICS  
Characteristic / Test Conditions / Part Number  
Symbol  
MIN  
TYP  
MAX  
UNIT  
APT10050JN  
APT10050JN  
APT10050JN  
1000  
Drain-Source Breakdown Voltage  
BVDSS  
Volts  
(VGS = 0V, ID = 250 µA)  
2
On State Drain Current  
20.5  
ID(ON)  
Amps  
Ohms  
µA  
(VDS > ID(ON) x RDS(ON) Max, VGS = 10V)  
2
0.50  
Drain-Source On-State Resistance  
RDS(ON)  
(VGS = 10V, 0.5 ID [Cont.])  
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)  
250  
1000  
±100  
4
IDSS  
IGSS  
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)  
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)  
nA  
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)  
THERMAL CHARACTERISTICS  
2
Volts  
Symbol Characteristic  
MIN  
TYP  
MAX  
UNIT  
RΘJC  
RΘCS  
Junction to Case  
0.24  
°C/W  
Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)  
0.06  
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
USA  
405 S.W. Columbia Street  
EUROPE  
Bend, Oregon 97702-1035  
F-33700 Merignac - France  
Phone: (541) 382-8028  
Phone: (33) 5 57 92 15 15  
FAX: (541) 388-0364  
FAX: (33) 5 56 47 97 61  
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord  

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