型号 | 品牌 | 替代类型 | 描述 | 数据表 |
APT10078BFLLG | MICROSEMI |
类似代替 ![]() |
Power Field-Effect Transistor, 14A I(D), 1000V, 0.78ohm, 1-Element, N-Channel, Silicon, Me |
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IXFH14N100Q2 | IXYS |
功能相似 ![]() |
N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT10078SFLL | ADPOW |
获取价格 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po |
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APT10078SFLL | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 1000V, 0.78ohm, 1-Element, N-Channel, Silicon, Me |
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APT10078SFLLG | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 1000V, 0.78ohm, 1-Element, N-Channel, Silicon, Me |
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APT10078SLL | ADPOW |
获取价格 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po |
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APT10078SLLG | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 1000V, 0.78ohm, 1-Element, N-Channel, Silicon, Me |
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APT10086BLC | ADPOW |
获取价格 |
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement |
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APT10086BVFR | ADPOW |
获取价格 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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APT10086BVFR_05 | ADPOW |
获取价格 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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APT10086BVR | ADPOW |
获取价格 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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APT10086BVRG | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 1000V, 0.86ohm, 1-Element, N-Channel, Silicon, Me |
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