是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5.67 | 其他特性: | HIGH VOLTAGE |
雪崩能效等级(Eas): | 1300 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 1000 V |
最大漏极电流 (ID): | 13 A | 最大漏源导通电阻: | 0.86 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 245 | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 52 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | PURE MATTE TIN |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT10086BVRG | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 1000V, 0.86ohm, 1-Element, N-Channel, Silicon, Me |
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APT10086SLC | ADPOW |
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Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement |
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APT10086SVR | ADPOW |
获取价格 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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APT10086SVR | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 1000V, 0.86ohm, 1-Element, N-Channel, Silicon, Me |
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APT10086SVRG | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 1000V, 0.86ohm, 1-Element, N-Channel, Silicon, Me |
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APT10088HVR | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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APT10090BFLL | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po |
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APT10090BFLL_03 | ADPOW |
获取价格 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po |
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APT10090BLL | ADPOW |
获取价格 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po |
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APT10090BLL_03 | ADPOW |
获取价格 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po |
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