是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.65 |
雪崩能效等级(Eas): | 1300 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 1000 V |
最大漏极电流 (ID): | 14 A | 最大漏源导通电阻: | 0.78 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 245 |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 56 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Pure Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT10086BLC | ADPOW |
获取价格 |
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement |
![]() |
APT10086BVFR | ADPOW |
获取价格 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
![]() |
APT10086BVFR_05 | ADPOW |
获取价格 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
![]() |
APT10086BVR | ADPOW |
获取价格 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
![]() |
APT10086BVRG | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 1000V, 0.86ohm, 1-Element, N-Channel, Silicon, Me |
![]() |
APT10086SLC | ADPOW |
获取价格 |
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement |
![]() |
APT10086SVR | ADPOW |
获取价格 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
![]() |
APT10086SVR | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 1000V, 0.86ohm, 1-Element, N-Channel, Silicon, Me |
![]() |
APT10086SVRG | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 1000V, 0.86ohm, 1-Element, N-Channel, Silicon, Me |
![]() |
APT10088HVR | ADPOW |
获取价格 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
![]() |