Datasheet > APT10090BLL_03

APT10090BLL_03

更新时间： 2024-09-30 04:32:47

品牌	Logo	应用领域
ADPOW		/
页数	文件大小	规格书
5页	97K
描述
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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APT10090BLL_03 数据手册

APT10090BLL

APT10090SLL

1000V 12A 0.900Ω

BLL

POWER MOS 7 MOSFET

D³PAK

Power MOS 7^®is a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7^®by significantly lowering R_DS(ON)

and Q_g. Power MOS 7^®combines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

TO-247

SLL

• Lower Input Capacitance

• Lower Miller Capacitance

• Lower Gate Charge, Qg

• IncreasedPowerDissipation

• Easier To Drive

• TO-247 or Surface Mount D³PAK Package

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT10090

1000

UNIT

V_DSS

I_D

Drain-SourceVoltage

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

V_GS

V_GSM

Gate-SourceVoltageContinuous

±30

Gate-SourceVoltageTransient

±40

Total Power Dissipation @ T_C= 25°C

LinearDeratingFactor

298

Watts

W/°C

P_D

2.4

T_J,T_STG

T_L

OperatingandStorageJunctionTemperatureRange

Lead Temperature: 0.063" from Case for 10 Sec.

-55 to 150

300

°C

Amps

I_AR

Avalanche Current (Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

1210

Single Pulse Avalanche Energy

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

1000

TYP

MAX

UNIT

BV_DSS

I_D(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

On State Drain Current

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

Amps

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, 6A)

Ohms

µA

0.90

100

500

±100

Zero Gate Voltage Drain Current (V_DS= 1000V, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 800V, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 1mA)

I_DSS

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

12 3 4 5

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APT10090BLLG	MICROSEMI	获取价格	暂无描述
APT10090SFLL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT10090SLL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT100DL60B	MICROSEMI	获取价格	Ultrasoft Recovery Rectifi er Diode
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APT100DL60HJ-Module	MICROCHIP	获取价格	FRED Si diode Ultra fast recovery times Soft recovery characteristics High block
APT100DL60S	MICROSEMI	获取价格	Ultrasoft Recovery Rectifi er Diode
APT100DL60SG	MICROSEMI	获取价格	Ultrasoft Recovery Rectifi er Diode
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