Datasheet > APT10090BLL_03

APT10090BLL_03

更新时间： 2024-11-25 04:32:47

品牌	Logo	应用领域
ADPOW		/
页数	文件大小	规格书
5页	97K
描述
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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APT10090BLL_03 数据手册

APT10090BLL

APT10090SLL

1000V 12A 0.900Ω

BLL

POWER MOS 7 MOSFET

D³PAK

Power MOS 7^®is a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7^®by significantly lowering R_DS(ON)

and Q_g. Power MOS 7^®combines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

TO-247

SLL

• Lower Input Capacitance

• Lower Miller Capacitance

• Lower Gate Charge, Qg

• IncreasedPowerDissipation

• Easier To Drive

• TO-247 or Surface Mount D³PAK Package

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT10090

1000

UNIT

V_DSS

I_D

Drain-SourceVoltage

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

V_GS

V_GSM

Gate-SourceVoltageContinuous

±30

Gate-SourceVoltageTransient

±40

Total Power Dissipation @ T_C= 25°C

LinearDeratingFactor

298

Watts

W/°C

P_D

2.4

T_J,T_STG

T_L

OperatingandStorageJunctionTemperatureRange

Lead Temperature: 0.063" from Case for 10 Sec.

-55 to 150

300

°C

Amps

I_AR

Avalanche Current (Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

1210

Single Pulse Avalanche Energy

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

1000

TYP

MAX

UNIT

BV_DSS

I_D(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

On State Drain Current

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

Amps

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, 6A)

Ohms

µA

0.90

100

500

±100

Zero Gate Voltage Drain Current (V_DS= 1000V, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 800V, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 1mA)

I_DSS

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

12 3 4 5

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APT10090SLL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
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APT100DL60HJ-Module	MICROCHIP	获取价格	FRED Si diode Ultra fast recovery times Soft recovery characteristics High block
APT100DL60S	MICROSEMI	获取价格	Ultrasoft Recovery Rectifi er Diode
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