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APT100GF60JR PDF预览

APT100GF60JR

更新时间: 2024-10-01 22:07:27
品牌 Logo 应用领域
ADPOW 晶体晶体管功率控制双极性晶体管高压局域网
页数 文件大小 规格书
3页 65K
描述
The Fast IGBT is a new generation of high voltage power IGBTs.

APT100GF60JR 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PUFM-X4Reach Compliance Code:unknown
风险等级:5.63Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):100 A
集电极-发射极最大电压:600 V配置:SINGLE
门极-发射极最大电压:20 VJESD-30 代码:R-PUFM-X4
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):500 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):495 ns
标称接通时间 (ton):220 nsBase Number Matches:1

APT100GF60JR 数据手册

 浏览型号APT100GF60JR的Datasheet PDF文件第2页浏览型号APT100GF60JR的Datasheet PDF文件第3页 
APT100GF60JR  
600V 100A  
E
E
Fast IGBT  
C
G
The Fast IGBT is a new generation of high voltage power IGBTs. Using  
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,  
fast switching speed and low Collector-Emitter On voltage.  
SOT-227  
• Low Forward Voltage Drop  
• Low Tail Current  
• High Freq. Switching to 20KHz  
• Ultra Low Leakage Current  
• RBSOA and SCSOA Rated  
ISOTOP®  
C
• Avalanche Rated  
G
E
MAXIMUM RATINGS  
Symbol Parameter  
All Ratings: T = 25°C unless otherwise specified.  
C
UNIT  
APT100GF60JR  
Collector-EmitterVoltage  
VCES  
VCGR  
VGE  
IC1  
600  
600  
Volts  
Collector-Gate Voltage (RGE = 20KW)  
Gate-EmitterVoltage  
±20  
4
Continuous Collector Current  
@ TC = 25°C  
100  
IC2  
Continuous Collector Current @ TC = 60°C  
100  
Amps  
1
ICM  
ILM  
Pulsed Collector Current  
@ TC = 25°C  
280  
RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125°C  
200  
2
EAS  
PD  
Single Pulse Avalanche Energy  
mJ  
85  
TotalPowerDissipation  
Watts  
500  
TJ,TSTG OperatingandStorageJunctionTemperatureRange  
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.  
-55 to 150  
300  
°C  
TL  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
TYP  
MAX  
UNIT  
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 1.0mA)  
BVCES  
600  
4.5  
VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 700µA, Tj = 25°C)  
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)  
5.5  
2.2  
2.8  
6.5  
2.7  
Volts  
VCE(ON)  
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)  
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)  
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)  
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)  
3.4  
1.0  
ICES  
IGES  
mA  
nA  
5.0  
±100  
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  
USA  
405 S.W. Columbia Street  
Chemin de Magret  
Bend, Oregon 97702-1035  
F-33700 Merignac - France  
Phone: (541) 382-8028  
Phone: (33) 5 57 92 15 15  
FAX: (541) 388-0364  
FAX: (33) 5 56 47 97 61  
EUROPE  

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