型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT10050FN | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 22.5A I(D) | SIP-TAB | |
APT10050JLC | ADPOW |
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Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement | |
APT10050JN | ADPOW |
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N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
APT10050JVFR | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT10050JVFR_04 | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT10050JVR | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT10050LLC | ADPOW |
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Power MOS VITM is a new generation of low gate charge, high voltage | |
APT10050LLC | MICROSEMI |
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21A, 1000V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA, TO-264, 3 PIN | |
APT10050LVFR | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT10050LVFRG | MICROSEMI |
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Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Met |