Datasheet > AP4525GEH_08

AP4525GEH_08

更新时间： 2024-11-18 06:37:19

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
8页	191K
描述
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP4525GEH_08 数据手册

AP4525GEH

RoHS-compliant Product

Advanced Power

Electronics Corp.

N AND P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Simple Drive Requirement

N-CH BV_DSS

40V

28mΩ

15A

D1/D2

▼ Good Thermal Performance

▼ Fast Switching Performance

R_DS(ON)

I_D

P-CH BV_DSS

R_DS(ON)

-40V

42mΩ

-12A

TO-252-4L

Description

I_D

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

N-channel

P-channel

V_DS

V_GS

Drain-Source Voltage

-40

±16

Gate-Source Voltage

±16

15.0

12.0

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current

Pulsed Drain Current¹

Total Power Dissipation

Linear Derating Factor

Storage Temperature Range

-12.0

-10.0

-50

P_D@T_A=25℃

10.4

W/℃

℃

0.083

T_STG

T_J

-55 to 150

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

Rthj-a

110

Data and specifications subject to change without notice

200809235

12 3 4 5 6 7 8

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