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AP2303D5TR-E1 PDF预览

AP2303D5TR-E1

更新时间: 2024-01-16 10:42:28
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
12页 129K
描述
Regulator

AP2303D5TR-E1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.59Base Number Matches:1

AP2303D5TR-E1 数据手册

 浏览型号AP2303D5TR-E1的Datasheet PDF文件第1页浏览型号AP2303D5TR-E1的Datasheet PDF文件第2页浏览型号AP2303D5TR-E1的Datasheet PDF文件第3页浏览型号AP2303D5TR-E1的Datasheet PDF文件第5页浏览型号AP2303D5TR-E1的Datasheet PDF文件第6页浏览型号AP2303D5TR-E1的Datasheet PDF文件第7页 
Preliminary Datasheet  
2A DDR TERMINATION REGULATOR  
AP2303  
Absolute Maximum Ratings (Note 1)  
Value  
Parameter  
Symbol  
VCNTL  
PD  
Unit  
Supply Voltage for Internal Circuit  
Power Dissipation  
7
V
Internally Limited  
W
ESD (Human Body Model)  
Storage Temperature Range  
ESD  
TSTG  
2
KV  
oC  
oC  
-65 to 150  
TLEAD  
Lead Temperature (Soldering, 5sec)  
Package Thermal Resistance (Free Air)  
260  
SOIC-8  
TO-252-5  
28  
13  
oC/W  
θJC  
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.  
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated  
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods  
may affect device reliability.  
Recommended Operating Conditions  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit  
VCNTL (Note 2, 3)ꢀ  
Supply Voltage for Internal Circuit  
3.3  
6
V
DDR I  
2.5  
1.8  
VIN  
TJ  
VCNTL  
Power Input  
1.6  
0
V
DDR II  
oC  
Junction Temperature  
125  
Note 2: Keep VCNTL VIN in operation power on and power off sequences.  
Note 3: For safe operation, VCNTL MUST be tied to 3.3V rather than 5V.  
BCD Semiconductor Manufacturing Limited  
Jun. 2005 Rev. 1. 0  
4

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