Datasheet > AP2303GN

AP2303GN

更新时间： 2024-11-20 12:56:15

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	114K
描述
Advanced Power MOSFETs

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中文翻译

获取价格

数据手册

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AP2303GN 数据手册

Product specification

AP2303GN

▼ Simple Drive Requirement

▼ Small Package Outline

▼ Surface Mount Device

BV_DSS

R_DS(ON)

I_D

-30V

240mΩ

- 1.9A

SOT-23

Description

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

low on-resistance and cost-effectiveness.

Absolute Maximum Ratings

Symbol

Parameter

Rating

- 30

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

± 20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current^1,2

-1.9

-1.5

-10

P_D@T_A=25℃

Total Power Dissipation

1.38

Linear Derating Factor

0.01

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

℃/W

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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