Datasheet > AOTF14N50

AOTF14N50

更新时间： 2024-09-17 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	180K
描述
500V, 14A N-Channel MOSFET

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AOTF14N50 数据手册

AOT14N50 / AOTF14N50

500V, 14A N-Channel MOSFET

General Description

Features

The AOT14N50 & AOTF14N50 have been fabricated

using an advanced high voltage MOSFET process

that is designed to deliver high levels of performance

and robustness in popular AC-DC applications.

By providing low R_DS(on), C_issand C_rssalong with

guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power

supply designs.

V_DS(V) = 600V@150°C

I_D=14A

R_DS(ON)<0.38Ω

(V_GS= 10V)

100% UIS Tested!

100% R _gTested!

Top View

TO-220F

TO-220

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

AOT14N50

500

AOTF14N50

Units

V_GS

±30

T_C=25°C

14*

9.6*

Continuous Drain

Current

Pulsed Drain Current ^C

Avalanche Current ^{C, G}

I_D

T_C=100°C

9.6

I_DM

I_AR

Repetitive avalanche energy ^{C, G}

E_AR

E_AS

dv/dt

540

1080

Single pulsed avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

V/ns

223

1.8

P_D

Power Dissipation ^B

Derate above 25^oC

0.4

W/ C

T_J, T_STG

Junction and Storage Temperature Range

-50 to 150

300

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_L

Parameter

Symbol

R_θJA

AOT14N50

AOTF14N50

Units

Maximum Junction-to-Ambient ^A,D

°C/W

Maximum Case-to-Sink ^A

Maximum Junction-to-Case

2.5

°C/W

R_θCS

0.5

R_θJC

0.56

* Drain current limited by maximum junction temperature.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

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