Datasheet > AOTF266L

AOTF266L

更新时间： 2024-11-07 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
7页	347K
描述
60V N-Channel MOSFET

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AOTF266L 数据手册

AOT266L/AOB266L/AOTF266L

60V N-Channel MOSFET

General Description

Product Summary

V_DS

The AOT266L & AOB266L & AOTF266L uses Trench

MOSFET technology that is uniquely optimized to provide

the most efficient high frequency switching performance.

Both conduction and switching power losses are

60V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=6V)

140A/78A

< 3.5mΩ (< 3.2mΩ )

< 4.0mΩ (< 3.8mΩ )

minimized due to an extremely low combination of R_DS(ON)

Ciss and Coss. This device is ideal for boost converters

and synchronous rectifiers for consumer, telecom,

industrial power supplies and LED backlighting.

100% UIS Tested

100% R_gTested

Top View

TO-263

D²PAK

TO-220

TO-220F

AOT266L

AOTF266L

AOB266L

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOT266L/AOB266L

AOTF266L

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

T_C=25°C

140

110

Continuous Drain

Current ^G

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

450

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_DSM

Avalanche Current ^C

I_AS

Avalanche energy L=0.1mH ^C

E_AS

405

T_C=25°C

Power Dissipation ^B

T_C=100°C

268

134

45.5

22.5

P_D

T_A=25°C

2.1

1.3

P_DSM

°C

Power Dissipation ^A

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

AOT266L/AOB266L

AOTF266L

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

0.56

3.3

* Surface mount package TO263

Rev 2 : May 2012

www.aosmd.com

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