AOT15S65/AOB15S65/AOTF15S65
650V 15A
α
MOS TM Power Transistor
General Description
Product Summary
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
750V
60A
The AOT15S65 & AOB15S65 & AOTF15S65 have been
fabricated using the advanced αMOSTM high voltage
process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
0.29Ω
17.2nC
3.6µJ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT15S65L & AOB15S65L & AOTF15S65L
Top View
TO-263
D2PAK
TO-220
TO-220F
D
D
S
G
D
S
S
G
D
G
S
G
AOT15S65
AOTF15S65
AOB15S65
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT15S65/AOB15S65
AOTF15S65
AOTF15S65L
Units
Drain-Source Voltage
VDS
650
±30
V
Gate-Source Voltage
VGS
V
A
TC=25°C
15
10
15*
10*
60
15*
10*
Continuous Drain
Current
Pulsed Drain Current C
Avalanche Current C
ID
TC=100°C
IDM
IAR
2.4
86
A
Repetitive avalanche energy C
Single pulsed avalanche energy G
TC=25°C
EAR
EAS
mJ
mJ
W
173
208
1.7
50
0.4
100
34
PD
Power Dissipation B
Derate above 25oC
0.3
W/ o
C
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
dv/dt
V/ns
°C
20
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
TL
300
°C
Parameter
Symbol
AOT15S65/AOB15S65
AOTF15S65
AOTF15S65L
Units
Maximum Junction-to-Ambient A,D
RθJA
65
65
65
°C/W
Maximum Case-to-sink A
RθCS
RθJC
0.5
0.6
--
--
°C/W
°C/W
Maximum Junction-to-Case
2.5
3.7
* Drain current limited by maximum junction temperature.
Rev1: Mar 2012
www.aosmd.com
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