Datasheet > AOTF22N50

AOTF22N50

更新时间： 2024-11-07 12:24:59

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	539K
描述
500V,22A N-Channel MOSFET

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AOTF22N50 数据手册

AOT22N50/AOTF22N50

500V,22A N-Channel MOSFET

General Description

Product Summary

V_DS

600V@150℃

22A

The AOT22N50 & AOTF22N50 have been fabricated

using an advanced high voltage MOSFET process that is

designed to deliver high levels of performance and

robustness in popular AC-DC applications.By providing

low R_DS(on), C_issand C_rssalong with guaranteed avalanche

capability these parts can be adopted quickly into new

and existing offline power supply designs.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 0.26Ω

100% UIS Tested

100% R_gTested

For Halogen Free add "L" suffix to part number:

AOT22N50L&AOTF22N50L

Top View

TO-220F

TO-220

AOT22N50

AOTF22N50

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

AOT22N50

AOTF22N50

Units

Drain-Source Voltage

Gate-Source Voltage

500

±30

V_GS

T_C=25°C

22*

15*

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

Avalanche Current ^C

I_AR

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

735

1470

Single plused avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

V/ns

W/ ^oC

417

3.3

P_D

Power Dissipation ^B

Derate above 25^oC

0.4

Junction and Storage Temperature Range

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_J, T_STG

T_L

-55 to 150

300

°C

Parameter

Symbol

R_θJA

AOT22N50

AOTF22N50

Units

°C/W

Maximum Junction-to-Ambient ^A,D

0.5

0.3

Maximum Case-to-sink ^A

R_θCS

Maximum Junction-to-Case

R_θJC

2.5

* Drain current limited by maximum junction temperature.

Rev1: Dec 2011

www.aosmd.com

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