Datasheet > AOL1454

AOL1454

更新时间： 2024-09-14 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	531K
描述
N-Channel Enhancement Mode Field

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AOL1454 数据手册

AOL1454

N-Channel Enhancement Mode Field

Effect Transistor

General Description

The AOL1454 uses advanced trench technology to provide excellent R_DS(ON), low gate charge. It is ESD

protected. This device is suitable for use as a low side

switch in SMPS and general purpose applications.

Features

V_DS(V) = 40V

I_D= 50A (V_GS= 10V)

R_DS(ON)< 9mΩ (V_GS= 10V)

R_DS(ON)< 13mΩ (V_GS= 4.5V)

Ultra SO-8^TMTop View

Bottom tab

connected to

drain

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

T_C=25°C

Continuous Drain

Current ^B

T_C=100°C

I_D

Pulsed Drain Current ^C

I_DM

100

T_A=25°C

T_A=70°C

Continuous Drain

Current ^A

Avalanche Current ^C

I_DSM

I_AR

Repetitive avalanche energy L=0.3mH ^C

E_AR

135

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.1

P_DSM

Power Dissipation ^A

1.3

T_A=70°C

Junction and Storage Temperature Range T_J, T_STG

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Steady-State

Maximum Junction-to-Case ^D

Steady-State

R_θJC

1.8

2.5

1/6

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