Datasheet > AOL1722

AOL1722

更新时间： 2024-09-14 11:46:23

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
5页	249K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOL1722 数据手册

AOL1722

N-Channel Enhancement Mode Field Effect Transistor

SRFET

General Description

Features

SRFET^TMAOL1722/L uses advanced trench

technology with a monolithically integrated Schottky

diode to provide excellent R_DS(ON),and low gate charge.

This device is suitable for use as a low side FET in

SMPS, load switching and general purpose

applications. AOL1722 and AOL1722L are electrically

identical.

V_DS(V) = 30V

I_D=65A

(V _GS= 10V)

R_DS(ON)< 4.5mΩ (V_GS= 10V)

R_DS(ON)< 5.8mΩ (V_GS= 4.5V)

-RoHS Compliant

-AOL1722L is Halogen Free

UltraSO-8^TMTop View

Fits SOIC8

footprint !

SRFET^TM

Soft Recovery MOSFET:

Integrated Schottky Diode

Bottom tab

connected to

drain

Absolute Maximum Ratings T_C=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

±12

T_C=25°C

Continuous Drain

Current ^{B, H}

Pulsed Drain Current ^C

T_C=100°C

I_D

I_DM

Continuous Drain

Current ^A

T_A=25°C

T_A=70°C

I_DSM

I_AR

Avalanche Current ^C

Repetitive avalanche energy L=0.3mH ^C

E_AR

217

100

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.1

P_DSM

Power Dissipation ^A

T_A=70°C

1.3

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

19.6

Max

Units

°C/W

t ≤ 10s

Maximum Junction-to-Ambient

Maximum Junction-to-Case ^D

R_θJA

Steady-State

R_θJC

1.5

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5

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