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AOL1718 PDF预览

AOL1718

更新时间: 2024-09-14 06:37:15
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
7页 161K
描述
N-Channel Enhancement Mode Field Effect Transistor

AOL1718 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.74
Is Samacsys:N雪崩能效等级(Eas):80 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):90 A
最大漏源导通电阻:0.0043 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):410 A
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AOL1718 数据手册

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AOL1718  
N-Channel Enhancement Mode Field Effect Transistor  
TM  
SRFET  
General Description  
Features  
SRFETTM AOL1718 uses advanced trench technology  
with a monolithically integrated Schottky diode to provide  
excellent RDS(ON),and low gate charge. This device is  
ideally suited for use as a low side switch in CPU core  
power conversion.  
VDS (V) = 30V  
ID = 90A  
(VGS = 10V)  
(VGS = 10V)  
(VGS = 4.5V)  
R
DS(ON) < 3mΩ  
RDS(ON) < 4.3mΩ  
- RoHS Compliant  
- Halogen Free  
100% UIS Tested!  
100% R g Tested!  
UltraSO-8TM Top View  
D
SRFETTM  
Soft Recovery MOSFET:  
D
Bottom tab  
connected to  
Integrated Schottky Diode  
drain  
S
G
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
±20  
90  
V
V
VGS  
Continuous Drain  
Current G  
Pulsed Drain Current C  
TC=25°C  
ID  
TC=100°C  
71  
A
A
IDM  
410  
21  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
Avalanche Current C  
Repetitive avalanche energy L=0.1mHC  
IDSM  
16  
IAR  
40  
A
EAR  
80  
mJ  
TC=25°C  
Power Dissipation B  
TC=100°C  
100  
50  
PD  
W
TA=25°C  
2.1  
PDSM  
W
Power Dissipation A  
TA=70°C  
1.3  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
19.6  
48  
Max  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
25  
60  
t 10s  
RθJA  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
Steady-State  
Steady-State  
RθJC  
1
1.5  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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