Datasheet > AOL1712

AOL1712

更新时间： 2024-09-14 12:51:27

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飞思卡尔 - FREESCALE		/
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6页	566K
描述
N-Channel Enhancement Mode Field

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AOL1712 数据手册

AOL1712

N-Channel Enhancement Mode Field

Effect Transistor

General Description

SRFET ^TMAOL1712 uses advanced trench technology with a monolithically integrated Schottky

diode to provide excellent R_DS(ON),and low gate charge. This device is suitable for use as a low side

FET in SMPS, load switching and general purpose applications.

Features

V_DS(V) = 30V

I_D=65A

(V_GS= 10V)

R_DS(ON)< 4.2mΩ (V_GS= 10V)

R_DS(ON)< 5.5mΩ (V_GS= 4.5V)

Ultra SO-8^TMTop View

SRFET ^TM

Soft Recovery MOSFET:

Integrated Schottky Diode

Bottom tab

connected to

drain

Absolute Maximum Ratings T_C=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±12

T_C=25°C

Continuous Drain

Current ^{B, H}

Pulsed Drain Current ^C

T_C=100°C

I_D

I_DM

T_A=25°C

T_A=70°C

Continuous Drain

Current ^A

Avalanche Current ^C

I_DSM

I_AR

Repetitive avalanche energy L=0.3mH ^C

E_AR

217

100

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.1

P_DSM

Power Dissipation ^A

1.3

T_A=70°C

Junction and Storage Temperature Range T_J, T_STG

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

19.6

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Steady-State

Maximum Junction-to-Case ^D

Steady-State

R_θJC

1.5

1/6

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