Datasheet > AOL1702

AOL1702

更新时间： 2024-09-14 03:18:59

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
6页	140K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOL1702 数据手册

AOL1702

N-Channel Enhancement Mode Field Effect Transistor

SRFET

General Description

Features

The AOL1702 uses advanced trench technology with

a monolithically integrated Schottky diode to provide

excellent R_DS(ON),and low gate charge. This device is

suitable for use as a low side FET in SMPS, load

switching and general purpose applications. Standard

Product AOL1702L is Pb-free (meets ROHS & Sony

259 specifications). AOL1702L is a Green Product

ordering option. AOL1702 and AOL1702L are

electrically identical.

V_DS(V) = 30V

I_D=70A (V_GS= 10V)

_DS(ON)< 5.8mΩ (V_GS= 10V)

_DS(ON)< 7.2mΩ (V_GS= 4.5V)

UIS Tested

Rg,Ciss,Coss,Crss Tested

Ultra SO-8^TMTop View

Fits SOIC8

footprint !

SRFET ^TM

Soft Recovery MOSFET:

Integrated Schottky Diode

Bottom tab

connected to

drain

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

±12

T_C=25°C ^G

T_C=100°C

Continuous Drain

Current ^B

Pulsed Drain Current ^C

Continuous Drain

Current^A

Avalanche Current ^C

Repetitive avalanche energy L=0.3mH ^C

I_D

100

I_DM

T_A=25°C

T_A=70°C

I_DSM

I_AR

E_AR

135

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

P_DSM

Power Dissipation ^A

T_A=70°C

3.2

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^D

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJC

2.1

2.6

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

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