Datasheet > AOB466L

AOB466L

更新时间： 2024-11-20 12:24:23

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	499K
描述
60V N-Channel MOSFET

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AOB466L 数据手册

AOT466L/AOB466L

60V N-Channel MOSFET

General Description

MOSFET technology with a low resistance package to

boost converters and synchronous rectifiers for consumer,

The AOT466L & AOB466L combines advanced trench

provide extremely low R_DS(ON).This device is ideal for

telecom, industrial power supplies and LED backlighting.

Features

V_DS

60V

180A

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 3.9mΩ

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±25

V_GS

Continuous Drain

Current ^G

Pulsed Drain Current ^C

T_C=25°C

180

140

I_D

T_C=100°C

I_DM

540

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_DSM

Avalanche Current ^C

I_AS, I_AR

Avalanche energy L=0.3mH ^C

E_AS, E_AR

960

T_C=25°C

Power Dissipation ^B

T_C=100°C

333

P_D

167

T_A=25°C

1.9

P_DSM

Power Dissipation ^A

T_A=70°C

1.2

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

0.35

0.45

1/6

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