Datasheet > AOB482L

AOB482L

更新时间： 2024-09-16 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
7页	275K
描述
80V N-Channel MOSFET

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AOB482L 数据手册

AOT482L/AOB482L

80V N-Channel MOSFET

SDMOS^TM

General Description

Product Summary

The AOT482L/AOB482L is fabricated with SDMOS^TM

trench technology that combines excellent R_DS(ON)with low

V_DS

80V

105A

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 7V)

< 7.2mΩ

< 9mΩ

gate charge and low Q .The result is outstanding

efficiency with controlled switching behavior. This

universal technology is well suited for PWM, load

switching and general purpose applications.

100% UIS Tested

100% R_gTested

TO-263

D²PAK

TO220

Top View

Bottom View

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±25

V_GS

Continuous Drain

Current ^G

Pulsed Drain Current ^C

T_C=25°C

105

I_D

T_C=100°C

I_DM

330

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

I_DSM

I_AS, I_AR

Avalanche energy L=0.1mH ^C

E_AS, E_AR

336

333

167

2.1

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

P_DSM

Power Dissipation ^A

T_A=70°C

1.3

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

0.36

0.45

Pev 0: May 2010

www.aosmd.com

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