AOT4S60/AOB4S60/AOTF4S60
600V 4A
α
MOS TM Power Transistor
General Description
Product Summary
VDS @ Tj,max
IDM
700V
16A
The AOT4S60 & AOB4S60 & AOTF4S60 have been
fabricated using the advanced αMOSTM high voltage
process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
RDS(ON),max
Qg,typ
0.9Ω
6nC
Eoss @ 400V
1.5µJ
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT4S60L & AOB4S60L & AOTF4S60L
Top View
TO-263
D2PAK
D
TO-220
TO-220F
D
G
S
S
S
D
D
S
G
G
G
AOT4S60
AOTF4S60
AOB4S60
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT4S60/AOB4S60
600
AOTF4S60
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
V
V
VGS
±30
TC=25°C
4
4*
Continuous Drain
Current
ID
TC=100°C
3.7
3.7*
A
Pulsed Drain Current C
Avalanche Current C
IDM
IAR
16
1.6
38
77
A
Repetitive avalanche energy C
Single pulsed avalanche energy G
TC=25°C
EAR
EAS
mJ
mJ
W
83
31
PD
Power Dissipation B
Derate above 25oC
0.67
0.25
W/ oC
100
20
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
dv/dt
V/ns
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
TL
300
Parameter
Symbol
AOT4S60/AOB4S60
AOTF4S60
Units
Maximum Junction-to-Ambient A,D
RθJA
65
65
°C/W
Maximum Case-to-sink A
RθCS
RθJC
0.5
1.5
--
4
°C/W
°C/W
Maximum Junction-to-Case
* Drain current limited by maximum junction temperature.
Rev 1: Jan 2012
www.aosmd.com
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