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AOB470L PDF预览

AOB470L

更新时间: 2024-11-20 12:51:35
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
6页 311K
描述
75V N-Channel MOSFET

AOB470L 数据手册

 浏览型号AOB470L的Datasheet PDF文件第2页浏览型号AOB470L的Datasheet PDF文件第3页浏览型号AOB470L的Datasheet PDF文件第4页浏览型号AOB470L的Datasheet PDF文件第5页浏览型号AOB470L的Datasheet PDF文件第6页 
AOT470/AOB470L  
75V N-Channel MOSFET  
General Description  
Product Summary  
VDS  
The AOT470/AOB470L uses advanced trench technology  
and design to provide excellent RDS(ON) with low gate  
charge. This device is suitable for use in PWM, load  
switching and general purpose applications.  
75V  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
100A  
< 10.5m  
100% UIS Tested  
100% Rg Tested  
TO-263  
D2PAK  
TO220  
Top View  
Bottom View  
D
Top View  
Bottom View  
D
D
D
D
G
S
S
G
G
S
D
D
G
G
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
VDS  
75  
V
V
Gate-Source Voltage  
VGS  
±25  
100  
78  
TC=25°C  
Continuous Drain  
Current G  
ID  
TC=100°C  
A
Pulsed Drain Current C  
IDM  
200  
10  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
Avalanche Current C  
Avalanche energy L=0.3mH C  
IDSM  
A
8
IAS, IAR  
45  
A
EAS, EAR  
300  
268  
134  
2.1  
mJ  
TC=25°C  
PD  
W
Power Dissipation B  
TC=100°C  
TA=25°C  
PDSM  
W
°C  
Power Dissipation A  
1.3  
TA=70°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 175  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
10  
Max  
12  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
t
10s  
RθJA  
Steady-State  
Steady-State  
45  
60  
RθJC  
0.45  
0.56  
Rev2: Mar 2012  
www.aosmd.com  
Page 1 of 6  

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