Datasheet > AOB480L

AOB480L

更新时间： 2024-11-20 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
7页	328K
描述
80V N-Channel MOSFET

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AOB480L 数据手册

AOT480L/AOB480L

80V N-Channel MOSFET

SDMOS ^TM

General Description

Product Summary

The AOT480L & AOB480L is fabricated with SDMOS^TM

trench technology that combines excellent R_DS(ON)with

low gate charge & low Q_rr.The result is outstanding

efficiency with controlled switching behavior. This

universal technology is well suited for PWM, load

switching and general purpose applications.

V_DS

80V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

180A

< 4.5mΩ

< 5.5mΩ

R_DS(ON)(at V_GS= 7V)

100% UIS Tested

100% R_gTested

TO-263

D²PAK

TO220

Top View

Bottom View

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±25

T_C=25°C

180

Continuous Drain

Current ^G

I_D

T_C=100°C

134

Pulsed Drain Current ^C

I_DM

500

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

I_AS,I_AR

E_AS,E_AR

405

T_C=25°C

Power Dissipation ^B

T_C=100°C

333

P_D

167

T_A=25°C

1.9

P_DSM

°C

Power Dissipation ^A

1.2

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

0.35

0.45

Rev1: April 2010

www.aosmd.com

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