Datasheet > AOB7S60

AOB7S60

更新时间： 2024-11-20 12:24:35

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
6页	293K
描述
600V 7A a MOS Power Transistor

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AOB7S60 数据手册

AOT7S60/AOB7S60/AOTF7S60

600V 7A

MOS ^TMPower Transistor

General Description

Product Summary

V_DS@ T_j,max

I_DM

700V

33A

The AOT7S60 & AOB7S60 & AOTF7S60 have been

fabricated using the advanced αMOS^TMhigh voltage

process that is designed to deliver high levels of

performance and robustness in switching applications.

By providing low R_DS(on), Q_gand E_OSSalong with

guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply

designs.

R_DS(ON),max

Q_g,typ

0.6Ω

8.2nC

1.9µJ

E_oss@ 400V

100% UIS Tested

100% R_gTested

For Halogen Free add "L" suffix to part number:

AOT7S60L & AOB7S60L & AOTF7S60L

Top View

TO-263

D²PAK

TO-220

TO-220F

AOT7S60

AOTF7S60

AOB7S60

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOT7S60/AOB7S60

600

AOTF7S60L

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±30

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C

Avalanche Current ^C

I_DM

I_AR

1.7

Repetitive avalanche energy ^C

Single pulsed avalanche energy ^G

T_C=25°C

E_AR

E_AS

W/ ^oC

104

0.8

P_D

Power Dissipation ^B

Derate above 25^oC

0.3

100

MOSFET dv/dt ruggedness

dv/dt

V/ns

°C

Peak diode recovery dv/dt ^H

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds ^J

Thermal Characteristics

T_L

300

°C

Parameter

Symbol

AOT7S60/AOB7S60

AOTF7S60L

Units

Maximum Junction-to-Ambient ^A,D

R_θJA

°C/W

Maximum Case-to-sink ^A

R_θCS

R_θJC

0.5

1.2

°C/W

Maximum Junction-to-Case

* Drain current limited by maximum junction temperature.

Rev0: Aug 2011

www.aosmd.com

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