Datasheet > AOB4S60L

AOB4S60L

更新时间： 2024-09-16 12:56:31

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
6页	301K
描述
600V 4A a MOS TM Power Transistor

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中文翻译

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AOB4S60L 数据手册

AOT4S60/AOB4S60/AOTF4S60

600V 4A

MOS ^TMPower Transistor

General Description

Product Summary

V_DS@ T_j,max

I_DM

700V

16A

The AOT4S60 & AOB4S60 & AOTF4S60 have been

fabricated using the advanced αMOS^TMhigh voltage

process that is designed to deliver high levels of

performance and robustness in switching applications.

By providing low R_DS(on), Q_gand E_OSSalong with

guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply

designs.

R_DS(ON),max

Q_g,typ

0.9Ω

6nC

E_oss@ 400V

1.5µJ

100% UIS Tested

100% R_gTested

For Halogen Free add "L" suffix to part number:

AOT4S60L & AOB4S60L & AOTF4S60L

Top View

TO-263

D²PAK

TO-220

TO-220F

AOT4S60

AOTF4S60

AOB4S60

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOT4S60/AOB4S60

600

AOTF4S60

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±30

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

3.7

3.7*

Pulsed Drain Current ^C

Avalanche Current ^C

I_DM

I_AR

1.6

Repetitive avalanche energy ^C

Single pulsed avalanche energy ^G

T_C=25°C

E_AR

E_AS

P_D

Power Dissipation ^B

Derate above 25^oC

0.67

0.25

W/ ^oC

100

MOSFET dv/dt ruggedness

Peak diode recovery dv/dt ^H

dv/dt

V/ns

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds ^J

Thermal Characteristics

T_L

300

Parameter

Symbol

AOT4S60/AOB4S60

AOTF4S60

Units

Maximum Junction-to-Ambient ^A,D

R_θJA

°C/W

Maximum Case-to-sink ^A

R_θCS

R_θJC

0.5

1.5

°C/W

Maximum Junction-to-Case

* Drain current limited by maximum junction temperature.

Rev 1: Jan 2012

www.aosmd.com

Page 1 of 6

12 3 4 5 6

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