Datasheet > AOB9N70L

AOB9N70L

更新时间： 2024-11-10 01:17:59

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	402K
描述
700V, 9A N-Channel MOSFET

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AOB9N70L 数据手册

AOT9N70/AOTF9N70/AOB9N70

700V, 9A N-Channel MOSFET

General Description

Product Summary

V_DS

800V@150℃

The AOT9N70 & AOTF9N70 & AOB9N70 have been

fabricated using an advanced high voltage MOSFET

process that is designed to deliver high levels of

performance and robustness in popular AC-DC

applications.

I_D(at V_GS=10V)

_DS(ON)(at V_GS=10V)

< 1.2Ω

By providing low R_DS(on), C_issand C_rssalong with

guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply

designs.

100% UIS Tested

100% R_gTested

Top View

TO-220

TO-263

D²PAK

TO-220F

AOT9N70

AOTF9N70

AOB9N70

Orderable Part Number

AOT9N70

Package Type

TO-220 Pb Free

TO-220F Pb Free

TO-220F Green

TO-263 Green

Form

Tube

Minimum Order Quantity

1000

800

AOTF9N70

AOTF9N70L

AOB9N70L

Tape & Reel

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOT(B)9N70

AOTF9N70

AOTF9N70L

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

700

±30

V_GS

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

5.8

5.8*

Pulsed Drain Current ^C

I_DM

3.2

Avalanche Current ^C

I_AR

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

Single plused avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

154

V/ns

W/ ^oC

236

1.8

27.8

0.22

P_D

Power Dissipation ^B

Derate above 25^oC

0.4

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

T_L

300

°C

Thermal Characteristics

Parameter

Symbol

R_θJA

AOT(B)9N70

AOTF9N70

AOTF9N70L

Units

Maximum Junction-to-Ambient ^A,D

°C/W

Maximum Case-to-sink ^A

R_θCS

0.5

°C/W

Maximum Junction-to-Case

R_θJC

0.53

2.5

4.5

* Drain current limited by maximum junction temperature.

Rev.3.0: January 2015

www.aosmd.com

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