Datasheet > AO4419

AO4419

更新时间： 2024-10-31 17:15:15

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	430K
描述
种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-9.7A;Vgs(th)(V):±20;漏源导通电阻:20mΩ@-10V

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AO4419 数据手册

UMW

AO4419

30V P-Channel MOSFET

General Description

The AO4419 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON). This device is ideal for load switch

and battery protection applications.

Product Summary

V_DS

-30V

I_D(at V_GS=-10V)

-9.7A

R_DS(ON)(at V_GS=-10V)

R_DS(ON)(at V_GS= -4.5V)

< 20mΩ

< 35mΩ

SOP-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

-30

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

-9.7

Continuous Drain

Current

Pulsed Drain Current ^C

Avalanche Current ^C

I_D

-7.8

I_DM

-70

I_AS, I_AR

E_AS, E_AR

-27

Avalanche energy L=0.1mH ^C

T_A=25°C

Power Dissipation ^B

T_A=70°C

3.1

P_D

°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

Steady-State

R_θJL

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与AO4419相关器件

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