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AO4419 PDF预览

AO4419

更新时间: 2024-11-18 17:15:15
品牌 Logo 应用领域
友台半导体 - UMW /
页数 文件大小 规格书
8页 430K
描述
种类:P-Channel;漏源电压(Vdss):-30V;持续漏极电流(Id)(在25°C时):-9.7A;Vgs(th)(V):±20;漏源导通电阻:20mΩ@-10V

AO4419 数据手册

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R
UMW  
AO4419  
30V P-Channel MOSFET  
D
General Description  
The AO4419 combines advanced trench MOSFET  
technology with a low resistance package to provide  
extremely low RDS(ON). This device is ideal for load switch  
and battery protection applications.  
G
S
Product Summary  
VDS  
8
-30V  
1
S
S
S
G
D
D
D
D
ID (at VGS=-10V)  
-9.7A  
7
6
5
2
3
4
RDS(ON) (at VGS=-10V)  
RDS(ON) (at VGS = -4.5V)  
< 20m  
< 35mΩ  
SOP-8  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
-30  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
VGS  
±20  
TA=25°C  
TA=70°C  
-9.7  
Continuous Drain  
Current  
Pulsed Drain Current C  
Avalanche Current C  
ID  
A
-7.8  
IDM  
-70  
IAS, IAR  
EAS, EAR  
-27  
A
Avalanche energy L=0.1mH C  
36  
mJ  
TA=25°C  
Power Dissipation B  
TA=70°C  
3.1  
PD  
W
°C  
2
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
RθJA  
Typ  
31  
Max  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
40  
75  
24  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
Steady-State  
Steady-State  
59  
RθJL  
16  
www.umw-ic.com  
1
UTD Semiconductor Co.,Limited  

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