Datasheet > AO4419L

AO4419L

更新时间： 2024-09-13 19:59:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	271K
描述
Transistor

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技术参数
数据手册

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AO4419L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.26
Base Number Matches：	1

AO4419L 数据手册

AO4419

30V P-Channel MOSFET

General Description

Product Summary

V_DS

-30V

The AO4419 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON). This device is ideal for load switch

and battery protection applications.

I_D(at V_GS=-10V)

-9.7A

_DS(ON)(at V_GS=-10V)

< 20mΩ

< 35mΩ

R_DS(ON)(at V_GS= -4.5V)

100% UIS Tested

100% R_gTested

SOIC-8

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

-30

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

-9.7

Continuous Drain

Current

Pulsed Drain Current ^C

Avalanche Current ^C

I_D

-7.8

I_DM

-70

I_AS, I_AR

E_AS, E_AR

-27

Avalanche energy L=0.1mH ^C

T_A=25°C

Power Dissipation ^B

T_A=70°C

3.1

P_D

°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

Steady-State

R_θJL

Rev 6: May 2011

www.aosmd.com

Page 1 of 6

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