Datasheet > AM3415E3VR

AM3415E3VR

更新时间： 2024-09-14 01:15:31

品牌	Logo	应用领域
创瑞 - AITSEMI		/
页数	文件大小	规格书
8页	487K
描述
P-CHANNEL ENHANCEMENT MODE

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数据手册

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AM3415E3VR 数据手册

AM3415

AiT Semiconductor Inc.

www.ait-ic.com

MOSFET

P-CHANNEL ENHANCEMENT MODE

DESCRIPTION

FEATURES



-20V/-4.0A, R_DS(ON)=45mΩ(typ.)@V_GS=-4.5V

-20V/-4.0A, R_DS(ON)=54mΩ(typ.)@V_GS=-2.5V

-20V/-2.0A, R_DS(ON)=68mΩ(typ.)@V_GS=-1.8V

-20V/-1.0A, R_DS(ON)=92mΩ(typ.)@V_GS=-1.5V

Super high density cell design for extremely

low R_DS(ON)

The AM3415 is the P-Channel logic enhancement

mode power field effect transistor is produced using

high cell density. Advanced trench technology to

provide excellent R_DS(ON)low gate charge and

operation with gate voltage as 1.5V.



Exceptional on-resistance and Maximum DC

current capability

ESD Protected : 3kV

This device is suitable for use as a load switch or in

applications.



Available in SOT-23 package

The AM3415 is available in SOT-23 Package

ORDERING INFORMATION

APPLICATIONS



Cellular/Portable

Load Switch

Package Type

SOT-23

Part Number

AM3415E3R

AM3415E3VR

V: Halogen free Package

R : Tape & Reel

AiT provides all RoHS products

Note

P-CHANNEL MOSFET

Suffix “ V “ means Halogen free Package

REV1.1

-NOV 2011 RELEASED, JUL 2016 UPDATED -

- 1 -

12 3 4 5 6 7 8

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